Enabling Highly-Efficient, Low-Latency Analog CAM Operations with Optimized MoS2 Flash Memory Devices

Abstract

<p>Emerging non-volatile memory-based analog content addressable memories promise massively parallel data search and explainable edge processing. Still, their performance improvement has been bottlenecked by silicon-based transistor performance. In response, we optimize atomic thin MoS2 flash memories with a record-high readout current (60 μA/μm) and a large current ON/OFF ratio (>109) for low-latency, low column interference, and high energy efficiency of analog CAM cells, enabled by Antimony (Sb) semimetal contact for lower contact resistance and better gate controllability. We experimentally demonstrated the range search operation with our fabricated MoS2 analog CAM array, promising the potential of atomically thin semiconductors for developing next-generation high-speed and low-power edge devices.</p>