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Article: Thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors

TitleThermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors
Authors
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2004, v. 85 n. 19, p. 4505-4507 How to Cite?
AbstractThe thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) is investigated. The experimental results show that the current gain in the InGaP/GaAsSb/GaAs DHBTs is nearly independent of the substrate temperature at collector current densities > 10 A/cm2, indicating that the InGaP/GaAsSb/GaAs DHBTs have excellent thermal stability. This finding suggests that the InGaP/GaAsSb/GaAs DHBTs have larger emitter-base junction valence-band discontinuity than traditional GaAs-based HBTs. © 2004 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42101
ISSN
2020 Impact Factor: 3.791
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYan, BPen_HK
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorWang, XQen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-01-08T02:29:00Z-
dc.date.available2007-01-08T02:29:00Z-
dc.date.issued2004en_HK
dc.identifier.citationApplied Physics Letters, 2004, v. 85 n. 19, p. 4505-4507-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42101-
dc.description.abstractThe thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) is investigated. The experimental results show that the current gain in the InGaP/GaAsSb/GaAs DHBTs is nearly independent of the substrate temperature at collector current densities > 10 A/cm2, indicating that the InGaP/GaAsSb/GaAs DHBTs have excellent thermal stability. This finding suggests that the InGaP/GaAsSb/GaAs DHBTs have larger emitter-base junction valence-band discontinuity than traditional GaAs-based HBTs. © 2004 American Institute of Physics.en_HK
dc.format.extent104926 bytes-
dc.format.extent2607 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2004, v. 85 n. 19, p. 4505-4507 and may be found at https://doi.org/10.1063/1.1819505-
dc.subjectPhysics engineeringen_HK
dc.titleThermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=85&issue=19&spage=4505&epage=4507&date=2004&atitle=Thermal+stability+of+current+gain+in+InGaP/GaAsSb/GaAs+double-heterojunction+bipolar+transistorsen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1819505en_HK
dc.identifier.scopuseid_2-s2.0-10844266483en_HK
dc.identifier.hkuros102385-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-10844266483&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume85en_HK
dc.identifier.issue19en_HK
dc.identifier.spage4505en_HK
dc.identifier.epage4507en_HK
dc.identifier.isiWOS:000224962800080-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYan, BP=7201858607en_HK
dc.identifier.scopusauthoridHsu, CC=7404947020en_HK
dc.identifier.scopusauthoridWang, XQ=7501857054en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK
dc.identifier.issnl0003-6951-

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