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Article: Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation

TitleQuality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation
Authors
Lai, PTXu, JLo, HBCheng, YC
KeywordsPhysics engineering
Issue Date1997
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1997, v. 70 n. 8, p. 996-998 How to Cite?
DOI: http://dx.doi.org/10.1063/1.118460
AbstractQuality of low-pressure chemical-vapor-deposited (LPCVD) oxide and N2O-nitrided LPCVD (LN2ON) oxide is investigated under high-field stress conditions as compared to thermal oxide. It is found that LPCVD oxide has lower midgap interface-state density Dit-m and smaller stress-induced Dit-m increase than thermal oxide, but exhibits enhanced electron trapping rate and degraded charge-to-breakdown characteristics, which, however, are significantly suppressed in LN2ON oxide, suggesting effective elimination of hydrogen-related species. Moreover, LN2ON oxide shows further improved Si/SiO2 interface due to interfacial nitrogen incorporation. © 1997 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42105
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:A1997WJ62600027
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, Jen_HK
dc.contributor.authorLo, HBen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-01-08T02:29:05Z-
dc.date.available2007-01-08T02:29:05Z-
dc.date.issued1997en_HK
dc.identifier.citationApplied Physics Letters, 1997, v. 70 n. 8, p. 996-998-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42105-
dc.description.abstractQuality of low-pressure chemical-vapor-deposited (LPCVD) oxide and N2O-nitrided LPCVD (LN2ON) oxide is investigated under high-field stress conditions as compared to thermal oxide. It is found that LPCVD oxide has lower midgap interface-state density Dit-m and smaller stress-induced Dit-m increase than thermal oxide, but exhibits enhanced electron trapping rate and degraded charge-to-breakdown characteristics, which, however, are significantly suppressed in LN2ON oxide, suggesting effective elimination of hydrogen-related species. Moreover, LN2ON oxide shows further improved Si/SiO2 interface due to interfacial nitrogen incorporation. © 1997 American Institute of Physics.en_HK
dc.format.extent70513 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 1997, v. 70 n. 8, p. 996-998 and may be found at https://doi.org/10.1063/1.118460-
dc.subjectPhysics engineeringen_HK
dc.titleQuality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=70&issue=8&spage=996&epage=998&date=1997&atitle=Quality+improvement+of+low-pressure+chemical-vapor-deposited+oxide+by+N2O+nitridationen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, J: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, J=rp00197en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.118460en_HK
dc.identifier.scopuseid_2-s2.0-0012214966en_HK
dc.identifier.hkuros26278-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0012214966&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume70en_HK
dc.identifier.issue8en_HK
dc.identifier.spage996en_HK
dc.identifier.epage998en_HK
dc.identifier.isiWOS:A1997WJ62600027-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, J=7407004696en_HK
dc.identifier.scopusauthoridLo, HB=7202085394en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK
dc.identifier.issnl0003-6951-

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