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Article: Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor

TitleThermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor
Authors
Lo, HBYang, ESYang, YF
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1999, v. 74 n. 12, p. 1725-1727 How to Cite?
DOI: http://dx.doi.org/10.1063/1.123668
AbstractThe temperature dependence of current gain was investigated for AlGaAs/GaAs heterostructure-emitter bipolar transistors (HEBT). The current gain of the HEBT was found much less sensitive to temperature variation than that of a heterojunction bipolar transistor. In particular, the HEBT current gain was more or less constant with increasing temperature at the high current regime, indicating great potentials for power applications.
Persistent Identifierhttp://hdl.handle.net/10722/42106
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000079405800028
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLo, HBen_HK
dc.contributor.authorYang, ESen_HK
dc.contributor.authorYang, YFen_HK
dc.date.accessioned2007-01-08T02:29:07Z-
dc.date.available2007-01-08T02:29:07Z-
dc.date.issued1999en_HK
dc.identifier.citationApplied Physics Letters, 1999, v. 74 n. 12, p. 1725-1727-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42106-
dc.description.abstractThe temperature dependence of current gain was investigated for AlGaAs/GaAs heterostructure-emitter bipolar transistors (HEBT). The current gain of the HEBT was found much less sensitive to temperature variation than that of a heterojunction bipolar transistor. In particular, the HEBT current gain was more or less constant with increasing temperature at the high current regime, indicating great potentials for power applications.en_HK
dc.format.extent67210 bytes-
dc.format.extent2607 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 1999, v. 74 n. 12, p. 1725-1727 and may be found at https://doi.org/10.1063/1.123668-
dc.subjectPhysics engineeringen_HK
dc.titleThermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=74&issue=12&spage=1725&epage=1727&date=1999&atitle=Thermal+effect+on+current+gains+of+an+AlGaAs/GaAs+heterostructure-emitter+bipolar+transistoren_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.123668en_HK
dc.identifier.scopuseid_2-s2.0-0032621272en_HK
dc.identifier.hkuros44580-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032621272&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume74en_HK
dc.identifier.issue12en_HK
dc.identifier.spage1725en_HK
dc.identifier.epage1727en_HK
dc.identifier.isiWOS:000079405800028-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLo, HB=7202085394en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK
dc.identifier.scopusauthoridYang, YF=7409383278en_HK
dc.identifier.issnl0003-6951-

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