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Article: Refractive index of InGaN/GaN quantum well

TitleRefractive index of InGaN/GaN quantum well
Authors
Leung, MMYDjuriŝić, ABLi, EH
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1998, v. 84 n. 11, p. 6312-6317 How to Cite?
DOI: http://dx.doi.org/10.1063/1.368954
AbstractIn this article, the optical properties of the In xGa 1-xN/GaN quantum well (QW) are investigated. The refractive index spectrum of a QW is essential to the design and implementation of optoelectronic devices. Yet, the refractive index of the InGaN/GaN QW system over a wide spectral range has been unavailable so far. This article presents a comprehensive model, which includes the exciton effect and most of the major critical points, to calculate the complex index of refraction of the InGaN/GaN QW at room temperature. The calculations have been performed for QW's with various alloy compositions and well widths in the spectral range from 1 to 9 eV. The model presented here fully considers transitions near the band edge and above barrier gap contributions. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42389
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000076930100072
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLeung, MMYen_HK
dc.contributor.authorDjuriŝić, ABen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-01-29T08:48:39Z-
dc.date.available2007-01-29T08:48:39Z-
dc.date.issued1998en_HK
dc.identifier.citationJournal of Applied Physics, 1998, v. 84 n. 11, p. 6312-6317-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42389-
dc.description.abstractIn this article, the optical properties of the In xGa 1-xN/GaN quantum well (QW) are investigated. The refractive index spectrum of a QW is essential to the design and implementation of optoelectronic devices. Yet, the refractive index of the InGaN/GaN QW system over a wide spectral range has been unavailable so far. This article presents a comprehensive model, which includes the exciton effect and most of the major critical points, to calculate the complex index of refraction of the InGaN/GaN QW at room temperature. The calculations have been performed for QW's with various alloy compositions and well widths in the spectral range from 1 to 9 eV. The model presented here fully considers transitions near the band edge and above barrier gap contributions. © 1998 American Institute of Physics.en_HK
dc.format.extent138017 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1998, v. 84 n. 11, p. 6312-6317 and may be found at https://doi.org/10.1063/1.368954-
dc.subjectPhysics engineeringen_HK
dc.titleRefractive index of InGaN/GaN quantum wellen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=84&issue=11&spage=6312&epage=6317&date=1998&atitle=Refractive+index+of+InGaN/GaN+quantum+wellen_HK
dc.identifier.emailDjuriŝić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjuriŝić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.368954en_HK
dc.identifier.scopuseid_2-s2.0-0000522945en_HK
dc.identifier.hkuros45893-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000522945&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume84en_HK
dc.identifier.issue11en_HK
dc.identifier.spage6312en_HK
dc.identifier.epage6317en_HK
dc.identifier.isiWOS:000076930100072-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLeung, MMY=7201943377en_HK
dc.identifier.scopusauthoridDjuriŝić, AB=7004904830en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK
dc.identifier.issnl0021-8979-

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