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Article: Effects of pulsed anodic oxide on the intermixing in InGaAs/GaAs and LnGaAs/AlGaAs quantum wells

TitleEffects of pulsed anodic oxide on the intermixing in InGaAs/GaAs and LnGaAs/AlGaAs quantum wells
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2003, v. 93 n. 12, p. 9823-9829 How to Cite?
AbstractIntermixing in InGaAs/AlGaAs quantum well structures was studied with and without an anodic oxide cap by rapid thermal annealing. Blueshifts in the photoluminescence (PL) energy were observed. Anodic oxide was demonstrated to suppress the blueshift noticeably. The suppression of the blueshift was attributed to a strain reduction.
Persistent Identifierhttp://hdl.handle.net/10722/42392
ISSN
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYuan, Sen_HK
dc.contributor.authorLiu, CYen_HK
dc.contributor.authorZhao, Fen_HK
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorTsui, WKen_HK
dc.contributor.authorDao, LVen_HK
dc.contributor.authorLiu, XQen_HK
dc.date.accessioned2007-01-29T08:48:43Z-
dc.date.available2007-01-29T08:48:43Z-
dc.date.issued2003en_HK
dc.identifier.citationJournal of Applied Physics, 2003, v. 93 n. 12, p. 9823-9829-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42392-
dc.description.abstractIntermixing in InGaAs/AlGaAs quantum well structures was studied with and without an anodic oxide cap by rapid thermal annealing. Blueshifts in the photoluminescence (PL) energy were observed. Anodic oxide was demonstrated to suppress the blueshift noticeably. The suppression of the blueshift was attributed to a strain reduction.en_HK
dc.format.extent114374 bytes-
dc.format.extent25600 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2003, v. 93 n. 12, p. 9823-9829 and may be found at https://doi.org/10.1063/1.1577407-
dc.subjectPhysics engineeringen_HK
dc.titleEffects of pulsed anodic oxide on the intermixing in InGaAs/GaAs and LnGaAs/AlGaAs quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=93&issue=12&spage=9823&epage=9829&date=2003&atitle=Effects+of+pulsed+anodic+oxide+on+the+intermixing+in+InGaAs/GaAs+and+InGaAs/A1GaAs+quantum+wellsen_HK
dc.identifier.emailTsui, WK:wktsui@eee.hku.hken_HK
dc.identifier.authorityTsui, WK=rp00182en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1577407en_HK
dc.identifier.scopuseid_2-s2.0-0037805614en_HK
dc.identifier.hkuros81217-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037805614&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume93en_HK
dc.identifier.issue12en_HK
dc.identifier.spage9823en_HK
dc.identifier.epage9829en_HK
dc.identifier.isiWOS:000183288900062-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYuan, S=7403270986en_HK
dc.identifier.scopusauthoridLiu, CY=36066236700en_HK
dc.identifier.scopusauthoridZhao, F=37016136200en_HK
dc.identifier.scopusauthoridChan, MCY=7402597965en_HK
dc.identifier.scopusauthoridTsui, WK=7005623168en_HK
dc.identifier.scopusauthoridDao, LV=7006713328en_HK
dc.identifier.scopusauthoridLiu, XQ=7409287304en_HK
dc.identifier.issnl0021-8979-

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