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Article: CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors

TitleCCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors
Authors
Hsu, CCYang, YFOu, HJYang, ES
KeywordsPhysics engineering
Issue Date1996
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1996, v. 69 n. 8, p. 1143-1144 How to Cite?
DOI: http://dx.doi.org/10.1063/1.117085
AbstractThe application of CCl4-doped semi-insulating InP as a buffer layer in a pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor (HEMT) grown by metalorganic chemical vapor deposition is reported. This Al-free InP-base HEMT with a gate length of 1.3 μm has extrinsic transconductances of 420 and 610 mS/mm at 300 and 77 K, respectively. A cutoff frequency of 15 GHz and a maximum oscillation frequency of 40 GHz are obtained. The results demonstrate the CCl4-doped semi-insulating InP is a promising buffer layer for InP-based HEMT. © 1996 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42741
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:A1996VD02300041
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorYang, YFen_HK
dc.contributor.authorOu, HJen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-03-23T04:31:16Z-
dc.date.available2007-03-23T04:31:16Z-
dc.date.issued1996en_HK
dc.identifier.citationApplied Physics Letters, 1996, v. 69 n. 8, p. 1143-1144-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42741-
dc.description.abstractThe application of CCl4-doped semi-insulating InP as a buffer layer in a pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor (HEMT) grown by metalorganic chemical vapor deposition is reported. This Al-free InP-base HEMT with a gate length of 1.3 μm has extrinsic transconductances of 420 and 610 mS/mm at 300 and 77 K, respectively. A cutoff frequency of 15 GHz and a maximum oscillation frequency of 40 GHz are obtained. The results demonstrate the CCl4-doped semi-insulating InP is a promising buffer layer for InP-based HEMT. © 1996 American Institute of Physics.en_HK
dc.format.extent156588 bytes-
dc.format.extent4187 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 1996, v. 69 n. 8, p. 1143-1144 and may be found at https://doi.org/10.1063/1.117085-
dc.subjectPhysics engineeringen_HK
dc.titleCCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=69&issue=8&spage=1143&epage=1144&date=1996&atitle=CCl4-doped+semi-insulating+InP+as+a+buffer+layer+in+GaInAs/InP+high+electron+mobility+transistorsen_HK
dc.identifier.authorityYang, ES=rp00199-
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.117085en_HK
dc.identifier.scopuseid_2-s2.0-0542411217-
dc.identifier.hkuros26937-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0542411217&selection=ref&src=s&origin=recordpage-
dc.identifier.volume69-
dc.identifier.issue8-
dc.identifier.spage1143-
dc.identifier.epage1144-
dc.identifier.isiWOS:A1996VD02300041-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridHsu, CC=7404947020-
dc.identifier.scopusauthoridYang, YF=7409383278-
dc.identifier.scopusauthoridOu, HJ=7005561022-
dc.identifier.scopusauthoridYang, ES=7202021229-
dc.identifier.issnl0003-6951-

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