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Article: The effect of carrier-induced change on the optical properties of AlGaAs-GaAs intermixed quantum wells

TitleThe effect of carrier-induced change on the optical properties of AlGaAs-GaAs intermixed quantum wells
Authors
KeywordsCharge carrier processes
Optical refraction
Quantum wells
Quantum-well interdiffusion
Quantum-well intermixing
Issue Date1998
PublisherIEEE.
Citation
IEEE Journal on Selected Topics in Quantum Electronics, 1998, v. 4 n. 4, p. 685-694 How to Cite?
AbstractThe carrier-induced effects in the change of absorption and refractive index on the AlGaAs-GaAs intermixing modified quantum wells (QW's) have been investigated theoretically. Band-filling, bandgap shrinkage, and free-carrier absorption have been included for various carrier concentrations. The Schrodinger and the Poisson equations have been considered self-consistently. The polarized absorption coefficients are calculated using the Kane k·p method for a four band model and followed by the Kramers-Kranig transformation to obtain the refractive index change. The results obtained show a more enhanced bandgap renormalization and change of absorption, but a reduced change in refractive index for the larger intermixing extents. It is important to know the carrier-induced optical parameter changes the intermixed QW's because of their recent interests in photonics.
Persistent Identifierhttp://hdl.handle.net/10722/42820
ISSN
2023 Impact Factor: 4.3
2023 SCImago Journal Rankings: 1.283
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChan, CYen_HK
dc.contributor.authorKwok, PCKen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-03-23T04:32:48Z-
dc.date.available2007-03-23T04:32:48Z-
dc.date.issued1998en_HK
dc.identifier.citationIEEE Journal on Selected Topics in Quantum Electronics, 1998, v. 4 n. 4, p. 685-694en_HK
dc.identifier.issn1077-260Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/42820-
dc.description.abstractThe carrier-induced effects in the change of absorption and refractive index on the AlGaAs-GaAs intermixing modified quantum wells (QW's) have been investigated theoretically. Band-filling, bandgap shrinkage, and free-carrier absorption have been included for various carrier concentrations. The Schrodinger and the Poisson equations have been considered self-consistently. The polarized absorption coefficients are calculated using the Kane k·p method for a four band model and followed by the Kramers-Kranig transformation to obtain the refractive index change. The results obtained show a more enhanced bandgap renormalization and change of absorption, but a reduced change in refractive index for the larger intermixing extents. It is important to know the carrier-induced optical parameter changes the intermixed QW's because of their recent interests in photonics.en_HK
dc.format.extent195897 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Journal of Selected Topics in Quantum Electronics-
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectCharge carrier processes-
dc.subjectOptical refraction-
dc.subjectQuantum wells-
dc.subjectQuantum-well interdiffusion-
dc.subjectQuantum-well intermixing-
dc.titleThe effect of carrier-induced change on the optical properties of AlGaAs-GaAs intermixed quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1077-260X&volume=4&issue=4&spage=685&epage=694&date=1998&atitle=The+effect+of+carrier-induced+change+on+the+optical+properties+of+AlGaAs-GaAs+intermixed+quantum+wellsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/2944.720480en_HK
dc.identifier.scopuseid_2-s2.0-0032120272-
dc.identifier.hkuros45813-
dc.identifier.isiWOS:000076177400014-
dc.identifier.issnl1077-260X-

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