File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Quantum well intermixing for the fabrication of InGaAsN/GaAs lasers with pulsed anodic oxidation

TitleQuantum well intermixing for the fabrication of InGaAsN/GaAs lasers with pulsed anodic oxidation
Authors
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2004, v. 95 n. 7, p. 3422-3426 How to Cite?
AbstractQuantum well (QW) intermixing was carried out by post-growth rapid thermal annealing in InGaAsN/GaAs QW laser structures grown by solid-source molecular-beam epitaxy. The intensity and width of the photoluminescence peak showed a dependence on annealing temperature and time, and the maximum intensity and minimum linewidth were obtained after the wafer was annealed at 670 °C for 60 s. The peak luminescence energy blueshifted with increasing annealing time, although it plateaued at an annealing time that corresponded to that yielding the maximum luminescence intensity. The diffusion coefficient for indium was determined from a comparison between experimental data and modeling, but showed that QW intermixing alone was not sufficient to account for the relatively large blueshift after annealing. Defects related to the incorporation of nitrogen in the QW layer were responsible for the low photoluminescence efficiency in the as-grown samples and were annealed out during rapid thermal annealing. During annealing, nitrogen interstitials moved to vacancy sites within the QW and thus suppressed QW intermixing. After annealing wafers under conditions giving the maximum luminescence intensity, lasers were fabricated with pulsed anodic oxidation. © 2004 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42952
ISSN
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorQu, Yen_HK
dc.contributor.authorLiu, CYen_HK
dc.contributor.authorYuan, Sen_HK
dc.contributor.authorWang, SZen_HK
dc.contributor.authorYoon, SFen_HK
dc.contributor.authorChan, CYen_HK
dc.contributor.authorHong, MHen_HK
dc.date.accessioned2007-03-23T04:35:22Z-
dc.date.available2007-03-23T04:35:22Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal of Applied Physics, 2004, v. 95 n. 7, p. 3422-3426-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42952-
dc.description.abstractQuantum well (QW) intermixing was carried out by post-growth rapid thermal annealing in InGaAsN/GaAs QW laser structures grown by solid-source molecular-beam epitaxy. The intensity and width of the photoluminescence peak showed a dependence on annealing temperature and time, and the maximum intensity and minimum linewidth were obtained after the wafer was annealed at 670 °C for 60 s. The peak luminescence energy blueshifted with increasing annealing time, although it plateaued at an annealing time that corresponded to that yielding the maximum luminescence intensity. The diffusion coefficient for indium was determined from a comparison between experimental data and modeling, but showed that QW intermixing alone was not sufficient to account for the relatively large blueshift after annealing. Defects related to the incorporation of nitrogen in the QW layer were responsible for the low photoluminescence efficiency in the as-grown samples and were annealed out during rapid thermal annealing. During annealing, nitrogen interstitials moved to vacancy sites within the QW and thus suppressed QW intermixing. After annealing wafers under conditions giving the maximum luminescence intensity, lasers were fabricated with pulsed anodic oxidation. © 2004 American Institute of Physics.en_HK
dc.format.extent85995 bytes-
dc.format.extent26112 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physics-
dc.rightsCopyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2004, v. 95 n. 7, p. 3422-3426 and may be found at https://doi.org/10.1063/1.1651322-
dc.subjectPhysics engineeringen_HK
dc.titleQuantum well intermixing for the fabrication of InGaAsN/GaAs lasers with pulsed anodic oxidationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=95&issue=7&spage=3422&epage=3426&date=2004&atitle=Quantum+well+intermixing+for+the+fabrication+of+InGaAsN/GaAs+lasers+with+pulsed+anodic+oxidationen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1651322en_HK
dc.identifier.scopuseid_2-s2.0-1942489204-
dc.identifier.hkuros89881-
dc.identifier.volume95-
dc.identifier.issue7-
dc.identifier.spage3422-
dc.identifier.epage3426-
dc.identifier.isiWOS:000220342700026-
dc.identifier.issnl0021-8979-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats