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Article: Improved performance and reliability of N 2O-grown oxynitride on 6H-SiC

TitleImproved performance and reliability of N 2O-grown oxynitride on 6H-SiC
Authors
Xu, JPLai, PTChan, CLLi, BCheng, YC
KeywordsHot-carrier stress
MOS devices
MOSFETs
nitridation
SiC
Issue Date2000
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 2000, v. 21 n. 6, p. 298-300 How to Cite?
DOI: http://dx.doi.org/10.1109/55.843156
AbstractThis letter reports, for the first time, N 2O-grown oxides on both n-type and p-type 6H-SiC wafers. It is demonstrated that the N 2O-grown technique leads to not only greatly improved SiC/SiO 2 interface and oxide qualities, but also considerably enhanced device reliabilities as compared to N 2O-nitrided and conventional thermally-oxidized devices. These improvements are especially obvious for p-type SiC MOS device, indicating that N 2O oxidation could be a promising technique for fabricating enhancement-type n-channel SiC MOSFET's.
Persistent Identifierhttp://hdl.handle.net/10722/44751
ISSN
0741-3106
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID
WOS:000087393400013
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChan, CLen_HK
dc.contributor.authorLi, Ben_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-10-30T06:09:25Z-
dc.date.available2007-10-30T06:09:25Z-
dc.date.issued2000en_HK
dc.identifier.citationIeee Electron Device Letters, 2000, v. 21 n. 6, p. 298-300en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44751-
dc.description.abstractThis letter reports, for the first time, N 2O-grown oxides on both n-type and p-type 6H-SiC wafers. It is demonstrated that the N 2O-grown technique leads to not only greatly improved SiC/SiO 2 interface and oxide qualities, but also considerably enhanced device reliabilities as compared to N 2O-nitrided and conventional thermally-oxidized devices. These improvements are especially obvious for p-type SiC MOS device, indicating that N 2O oxidation could be a promising technique for fabricating enhancement-type n-channel SiC MOSFET's.en_HK
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dc.format.extent1752 bytes-
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dc.format.extent6324 bytes-
dc.format.extent2432 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
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dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rights©2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectHot-carrier stressen_HK
dc.subjectMOS devicesen_HK
dc.subjectMOSFETsen_HK
dc.subjectnitridationen_HK
dc.subjectSiCen_HK
dc.titleImproved performance and reliability of N 2O-grown oxynitride on 6H-SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=21&issue=6&spage=298&epage=300&date=2000&atitle=Improved+performance+and+reliability+of+N2O-grown+oxynitride+on+6H-SiCen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/55.843156en_HK
dc.identifier.scopuseid_2-s2.0-0033729250en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033729250&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume21en_HK
dc.identifier.issue6en_HK
dc.identifier.spage298en_HK
dc.identifier.epage300en_HK
dc.identifier.isiWOS:000087393400013-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK
dc.identifier.scopusauthoridLi, B=22947844400en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK
dc.identifier.issnl0741-3106-

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