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Article: A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment

TitleA study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment
Authors
Lai, PTXu, JPLo, HBGheng, YC
KeywordsPhysics Engineering
Issue Date1997
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1997, v. 82 n. 4, p. 1947-1950 How to Cite?
DOI: http://dx.doi.org/10.1063/1.366007
AbstractA low-energy (550 eV) argon-ion beam was used to directly bombard the backsurface of nitrided n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) after the completion of all conventional processing steps. The interface and oxide-charge trapping characteristics of the bombarded MOSFETs were investigated as compared to nonbombarded and reoxidized-nitrided n-MOSFETs. It was found that after bombardment, interface state density decreases and interface hardness against hot-carrier bombardment enhances, and oxide charge trapping properties were also improved. The improvements exhibit a turnaround behavior depending on bombardment conditions and could be attributed to stress compensation in the vicinity of the Si/SiO2 interface and an annealing effect. © 1997 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44844
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:A1997XQ79700065
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLo, HBen_HK
dc.contributor.authorGheng, YCen_HK
dc.date.accessioned2007-10-30T06:11:28Z-
dc.date.available2007-10-30T06:11:28Z-
dc.date.issued1997en_HK
dc.identifier.citationJournal of Applied Physics, 1997, v. 82 n. 4, p. 1947-1950-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44844-
dc.description.abstractA low-energy (550 eV) argon-ion beam was used to directly bombard the backsurface of nitrided n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) after the completion of all conventional processing steps. The interface and oxide-charge trapping characteristics of the bombarded MOSFETs were investigated as compared to nonbombarded and reoxidized-nitrided n-MOSFETs. It was found that after bombardment, interface state density decreases and interface hardness against hot-carrier bombardment enhances, and oxide charge trapping properties were also improved. The improvements exhibit a turnaround behavior depending on bombardment conditions and could be attributed to stress compensation in the vicinity of the Si/SiO2 interface and an annealing effect. © 1997 American Institute of Physics.en_HK
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dc.format.extent2044 bytes-
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dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1997, v. 82 n. 4, p. 1947-1950 and may be found at https://doi.org/10.1063/1.366007-
dc.subjectPhysics Engineeringen_HK
dc.titleA study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardmenten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=82&issue=4&spage=1947&epage=1950&date=1997&atitle=A+study+on+interface+and+charge+trapping+properties+of+nitrided+n-channel+metal-oxide-semiconductor+field-effect+transistors+by+backsurface+argon+bombardmenten_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.366007en_HK
dc.identifier.scopuseid_2-s2.0-0345454491en_HK
dc.identifier.hkuros34427-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0345454491&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue4en_HK
dc.identifier.spage1947en_HK
dc.identifier.epage1950en_HK
dc.identifier.isiWOS:A1997XQ79700065-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLo, HB=7202085394en_HK
dc.identifier.scopusauthoridGheng, YC=13303571300en_HK
dc.identifier.issnl0021-8979-

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