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Conference Paper: Implementation of CMRC on HBT power amplifier for WCDMA application

TitleImplementation of CMRC on HBT power amplifier for WCDMA application
Authors
Poek, CKYan, BPYang, ES
KeywordsComputers
Circuits
Issue Date2004
PublisherIEEE.
Citation
International Conference On Solid-State And Integrated Circuits Technology Proceedings, Icsict, 2004, v. 3, p. 2242-2245 How to Cite?
DOI: http://dx.doi.org/10.1109/ICSICT.2004.1435290
AbstractAn InGaP/GaAs heterojunction bipolar transistor (HBT) is developed. By using this HBT, a power amplifier is designed for WCDMA user equipment, band-1 power class-2 application. The HBT power amplifier demonstrates a maximum output power (Pout) of 29.4dBm and a PAE of 48% at the frequency of 1.95GHz. When it operates in WCDMA standard, it achieves a Pout of 27dBm and a PAE of 32.4%. The Adjacent Channel Leakage power Ratio (ACLR) is -33dBc. To further improve the PAE, ACLR and IM3 performance, a CMRC circuit has been implemented on the HBT amplifier. The effect of CMRC on PAE and ACLR is investigated using a low power HBT amplifier. The results show that the ACLR can be improved by the CMRC. © 2004 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/45777
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorPoek, CKen_HK
dc.contributor.authorYan, BPen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-10-30T06:35:14Z-
dc.date.available2007-10-30T06:35:14Z-
dc.date.issued2004en_HK
dc.identifier.citationInternational Conference On Solid-State And Integrated Circuits Technology Proceedings, Icsict, 2004, v. 3, p. 2242-2245en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45777-
dc.description.abstractAn InGaP/GaAs heterojunction bipolar transistor (HBT) is developed. By using this HBT, a power amplifier is designed for WCDMA user equipment, band-1 power class-2 application. The HBT power amplifier demonstrates a maximum output power (Pout) of 29.4dBm and a PAE of 48% at the frequency of 1.95GHz. When it operates in WCDMA standard, it achieves a Pout of 27dBm and a PAE of 32.4%. The Adjacent Channel Leakage power Ratio (ACLR) is -33dBc. To further improve the PAE, ACLR and IM3 performance, a CMRC circuit has been implemented on the HBT amplifier. The effect of CMRC on PAE and ACLR is investigated using a low power HBT amplifier. The results show that the ACLR can be improved by the CMRC. © 2004 IEEE.en_HK
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dc.format.extent2795 bytes-
dc.format.extent5169 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICTen_HK
dc.rights©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectComputersen_HK
dc.subjectCircuitsen_HK
dc.titleImplementation of CMRC on HBT power amplifier for WCDMA applicationen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/ICSICT.2004.1435290en_HK
dc.identifier.scopuseid_2-s2.0-21644460690en_HK
dc.identifier.hkuros102396-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-21644460690&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume3en_HK
dc.identifier.spage2242en_HK
dc.identifier.epage2245en_HK
dc.identifier.scopusauthoridPoek, CK=8561880100en_HK
dc.identifier.scopusauthoridYan, BP=7201858607en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK

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