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Conference Paper: Vertical-cavity surface-emitting semiconductor lasers with diffusedquantum wells

TitleVertical-cavity surface-emitting semiconductor lasers with diffusedquantum wells
Authors
Lo, CWYu, SFLi, EH
KeywordsComputers
Issue Date1995
PublisherIEEE.
Citation
IEEE Region 10 International Conference on Microelectronics and VLSI, 6-10 November 1995, p. 93-94 How to Cite?
DOI: http://dx.doi.org/10.1109/TENCON.1995.496344
AbstractA self-consistent dynamic model is developed including the current distribution, carrier diffusion rate and spatial hole burning effects to investigate the modulation response of vertical-cavity surface-emitting lasers with diffused quantum wells structure. It is found that the overall performance including relaxation oscillation frequency and modulation bandwidth is improved.
Persistent Identifierhttp://hdl.handle.net/10722/45842
ISSN
0886-1420

 

DC FieldValueLanguage
dc.contributor.authorLo, CWen_HK
dc.contributor.authorYu, SFen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:36:43Z-
dc.date.available2007-10-30T06:36:43Z-
dc.date.issued1995en_HK
dc.identifier.citationIEEE Region 10 International Conference on Microelectronics and VLSI, 6-10 November 1995, p. 93-94en_HK
dc.identifier.issn0886-1420en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45842-
dc.description.abstractA self-consistent dynamic model is developed including the current distribution, carrier diffusion rate and spatial hole burning effects to investigate the modulation response of vertical-cavity surface-emitting lasers with diffused quantum wells structure. It is found that the overall performance including relaxation oscillation frequency and modulation bandwidth is improved.en_HK
dc.format.extent207744 bytes-
dc.format.extent14323 bytes-
dc.format.extent4647 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectComputersen_HK
dc.titleVertical-cavity surface-emitting semiconductor lasers with diffusedquantum wellsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0886-1420&volume=&spage=93&epage=94&date=1995&atitle=Vertical-cavity+surface-emitting+semiconductor+lasers+with+diffusedquantum+wellsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/TENCON.1995.496344en_HK
dc.identifier.hkuros11620-
dc.identifier.issnl0886-1420-

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