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Conference Paper: Analysis of three types of interdiffusion process in InGaAs/InP quantum-well and their devices implications
| Title | Analysis of three types of interdiffusion process in InGaAs/InP quantum-well and their devices implications |
|---|---|
| Authors | |
| Keywords | Physics engineerning chemistry |
| Issue Date | 1997 |
| Publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html |
| Citation | Infrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 2-5 December 1996, v. 450, p. 389-394 How to Cite? |
| Abstract | The optical properties of Ino 53Gao 47AS/I11P single quantum well (QW) (with an as-grown well width of 60Å structures) interdiffused with different cation and anion interdiffusion rates have been theoretically analyzed for applications in optoelectronics. The interdiffusion of InGaAs/InP QW structures is complicated as interdiffusion can occur for either (i) only group-Ill (In,Ga), (ii) group-V (As,P), or (iii) both group-Ill and group-V sublattices. Depending on the resulting composition profiles, the shifts (blue or red) of the transition energies can be tuned to wavelengths between 1.3µm to 1.55µm for device applications. The results show that the control of the rates of cation and anion interdiffusion offers interesting possibilities for designing optoelectronic devices such as modulators and lasers. |
| Persistent Identifier | http://hdl.handle.net/10722/46024 |
| ISSN | 2019 SCImago Journal Rankings: 0.114 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chan, MCY | en_HK |
| dc.contributor.author | Chan, KS | en_HK |
| dc.contributor.author | Li, EH | en_HK |
| dc.date.accessioned | 2007-10-30T06:40:53Z | - |
| dc.date.available | 2007-10-30T06:40:53Z | - |
| dc.date.issued | 1997 | en_HK |
| dc.identifier.citation | Infrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 2-5 December 1996, v. 450, p. 389-394 | en_HK |
| dc.identifier.issn | 0272-9172 | en_HK |
| dc.identifier.uri | http://hdl.handle.net/10722/46024 | - |
| dc.description.abstract | The optical properties of Ino 53Gao 47AS/I11P single quantum well (QW) (with an as-grown well width of 60Å structures) interdiffused with different cation and anion interdiffusion rates have been theoretically analyzed for applications in optoelectronics. The interdiffusion of InGaAs/InP QW structures is complicated as interdiffusion can occur for either (i) only group-Ill (In,Ga), (ii) group-V (As,P), or (iii) both group-Ill and group-V sublattices. Depending on the resulting composition profiles, the shifts (blue or red) of the transition energies can be tuned to wavelengths between 1.3µm to 1.55µm for device applications. The results show that the control of the rates of cation and anion interdiffusion offers interesting possibilities for designing optoelectronic devices such as modulators and lasers. | en_HK |
| dc.format.extent | 268770 bytes | - |
| dc.format.extent | 14323 bytes | - |
| dc.format.mimetype | application/pdf | - |
| dc.format.mimetype | text/plain | - |
| dc.language | eng | en_HK |
| dc.publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html | en_HK |
| dc.rights | Materials Research Society Symposium Proceedings. Copyright © Materials Research Society. | en_HK |
| dc.subject | Physics engineerning chemistry | en_HK |
| dc.title | Analysis of three types of interdiffusion process in InGaAs/InP quantum-well and their devices implications | en_HK |
| dc.type | Conference_Paper | en_HK |
| dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=450&spage=389&epage=394&date=1997&atitle=Analysis+of+three+types+of+interdiffusion+process+in+InGaAs/InP+quantum-well+and+their+devices+implications | en_HK |
| dc.description.nature | published_or_final_version | en_HK |
| dc.identifier.hkuros | 28206 | - |
| dc.identifier.issnl | 0272-9172 | - |