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Conference Paper: InGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gain

TitleInGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gain
Authors
Yan, BPHsu, CCWang, XQBai, YKYang, ES
KeywordsPhysics
Optics
Issue Date2002
PublisherIEEE.
Citation
Conference Proceedings - International Conference On Indium Phosphide And Related Materials, 2002, p. 169-172 How to Cite?
DOI: http://dx.doi.org/10.1109/ICIPRM.2002.1014291
AbstractAn InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. It features the use of a fully strained pseudomorphic GaAsSb (Sb composition: 10.4%) as the base layer and an InGaP layer as the emitter, which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 200 has been obtained from the InGaP/GaAsSb/GaAs DHBT, which is the highest value obtained from GaAsSb base GaAs-based HBTs. The turn-on voltage of the device is typically 0.914 V for the 10.4% Sb composition, which is 0.176V tower than that of traditional InGaP/GaAs HBT. The results show that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs.
Persistent Identifierhttp://hdl.handle.net/10722/46327
ISSN
1092-8669
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYan, BPen_HK
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorWang, XQen_HK
dc.contributor.authorBai, YKen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-10-30T06:47:25Z-
dc.date.available2007-10-30T06:47:25Z-
dc.date.issued2002en_HK
dc.identifier.citationConference Proceedings - International Conference On Indium Phosphide And Related Materials, 2002, p. 169-172en_HK
dc.identifier.issn1092-8669en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46327-
dc.description.abstractAn InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. It features the use of a fully strained pseudomorphic GaAsSb (Sb composition: 10.4%) as the base layer and an InGaP layer as the emitter, which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 200 has been obtained from the InGaP/GaAsSb/GaAs DHBT, which is the highest value obtained from GaAsSb base GaAs-based HBTs. The turn-on voltage of the device is typically 0.914 V for the 10.4% Sb composition, which is 0.176V tower than that of traditional InGaP/GaAs HBT. The results show that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs.en_HK
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dc.format.extent2795 bytes-
dc.format.extent5169 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofConference Proceedings - International Conference on Indium Phosphide and Related Materialsen_HK
dc.rights©2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectPhysicsen_HK
dc.subjectOpticsen_HK
dc.titleInGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gainen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1092-8669&volume=&spage=169&epage=172&date=2002&atitle=InGaP/GaAsSb/GaAs+DHBTs+with+low+turn-on+voltage+and+high+current+gainen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/ICIPRM.2002.1014291en_HK
dc.identifier.scopuseid_2-s2.0-0036045632en_HK
dc.identifier.hkuros72503-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036045632&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage169en_HK
dc.identifier.epage172en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYan, BP=7201858607en_HK
dc.identifier.scopusauthoridHsu, CC=7404947020en_HK
dc.identifier.scopusauthoridWang, XQ=7501857054en_HK
dc.identifier.scopusauthoridBai, YK=36084084600en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK
dc.identifier.issnl1092-8669-

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