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- Publisher Website: 10.1109/EDSSC.2003.1283545
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Conference Paper: Novel InGaP/GaAsSb/GaAs DHBTs
| Title | Novel InGaP/GaAsSb/GaAs DHBTs |
|---|---|
| Authors | |
| Issue Date | 2003 |
| Publisher | IEEE. |
| Citation | IEEE Conference on Electron Devices and Solid-State Circuits, Hong Kong, China, 16-18 December 2003, p. 339-342 How to Cite? |
| Abstract | A study of the InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. Novel device structure is designed. A fully strained pseudomorphic GaAsSb with 8.0% Sb composition is used as the base layer, while an InGaP layer as the emitter which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 22.6 has been obtained from the InGaP/GaAsSb/GaAs DHBT. Typical turn-on voltage of the device is 0.973 V which is 0.116V lower than that of traditional InGaP/GaAs HBT. Moreover, the current transport mechanism of the InGaP/GaAsSb/GaAs DHBTs is investigated. These results show that GaAsSb is a promising base material for reducing the turn-on voltage of GaAs HBTs. |
| Persistent Identifier | http://hdl.handle.net/10722/46515 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cheung, CC | en_HK |
| dc.contributor.author | Yan, BP | en_HK |
| dc.contributor.author | Hsu, CC | en_HK |
| dc.contributor.author | Yang, ES | en_HK |
| dc.date.accessioned | 2007-10-30T06:51:41Z | - |
| dc.date.available | 2007-10-30T06:51:41Z | - |
| dc.date.issued | 2003 | en_HK |
| dc.identifier.citation | IEEE Conference on Electron Devices and Solid-State Circuits, Hong Kong, China, 16-18 December 2003, p. 339-342 | en_HK |
| dc.identifier.uri | http://hdl.handle.net/10722/46515 | - |
| dc.description.abstract | A study of the InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. Novel device structure is designed. A fully strained pseudomorphic GaAsSb with 8.0% Sb composition is used as the base layer, while an InGaP layer as the emitter which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 22.6 has been obtained from the InGaP/GaAsSb/GaAs DHBT. Typical turn-on voltage of the device is 0.973 V which is 0.116V lower than that of traditional InGaP/GaAs HBT. Moreover, the current transport mechanism of the InGaP/GaAsSb/GaAs DHBTs is investigated. These results show that GaAsSb is a promising base material for reducing the turn-on voltage of GaAs HBTs. | en_HK |
| dc.format.extent | 223915 bytes | - |
| dc.format.extent | 2795 bytes | - |
| dc.format.extent | 2188 bytes | - |
| dc.format.mimetype | application/pdf | - |
| dc.format.mimetype | text/plain | - |
| dc.format.mimetype | text/plain | - |
| dc.language | eng | en_HK |
| dc.publisher | IEEE. | en_HK |
| dc.rights | ©2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
| dc.title | Novel InGaP/GaAsSb/GaAs DHBTs | en_HK |
| dc.type | Conference_Paper | en_HK |
| dc.description.nature | published_or_final_version | en_HK |
| dc.identifier.doi | 10.1109/EDSSC.2003.1283545 | en_HK |
| dc.identifier.scopus | eid_2-s2.0-84862797934 | - |
| dc.identifier.hkuros | 96221 | - |