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Article: Planar microwave devices fabricated by ion-implantation patterning of high-temperature superconductors

TitlePlanar microwave devices fabricated by ion-implantation patterning of high-temperature superconductors
Authors
Degroot, DGRudman, DAZhang, KMa, QKato, HJaeger, NA
KeywordsPhysics engineering
Issue Date1996
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1996, v. 69 n. 14, p. 2119-2121 How to Cite?
DOI: http://dx.doi.org/10.1063/1.116899
AbstractWe have applied ion-implantation inhibit patterning as a new method of fabricating low-loss microwave transmission lines in high-temperature superconductor thin films. To determine the effectiveness of this technique, we fabricated coplanar waveguide transmission lines in YBa2Cu3O7 – thin films that had been deposited on LaAlO3 substrates using pulsed laser deposition. Microwave characterizations of these lines are compared to a reference line fabricated with conventional ion milling. At 76 K and 12 GHz, the attenuation constants of the ion-implanted transmission lines are approximated 0.02 dB/mm, and the overall loss response is indistinguishable from that of the ion-milled device.
Persistent Identifierhttp://hdl.handle.net/10722/53379
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:A1996VJ78300044

 

DC FieldValueLanguage
dc.contributor.authorDegroot, DGen_HK
dc.contributor.authorRudman, DAen_HK
dc.contributor.authorZhang, Ken_HK
dc.contributor.authorMa, Qen_HK
dc.contributor.authorKato, Hen_HK
dc.contributor.authorJaeger, NAen_HK
dc.date.accessioned2009-04-03T07:18:11Z-
dc.date.available2009-04-03T07:18:11Z-
dc.date.issued1996en_HK
dc.identifier.citationApplied Physics Letters, 1996, v. 69 n. 14, p. 2119-2121-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/53379-
dc.description.abstractWe have applied ion-implantation inhibit patterning as a new method of fabricating low-loss microwave transmission lines in high-temperature superconductor thin films. To determine the effectiveness of this technique, we fabricated coplanar waveguide transmission lines in YBa2Cu3O7 – thin films that had been deposited on LaAlO3 substrates using pulsed laser deposition. Microwave characterizations of these lines are compared to a reference line fabricated with conventional ion milling. At 76 K and 12 GHz, the attenuation constants of the ion-implanted transmission lines are approximated 0.02 dB/mm, and the overall loss response is indistinguishable from that of the ion-milled device.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 1996, v. 69 n. 14, p. 2119-2121 and may be found at https://doi.org/10.1063/1.116899-
dc.subjectPhysics engineeringen_HK
dc.titlePlanar microwave devices fabricated by ion-implantation patterning of high-temperature superconductorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=69&issue=14&spage=2119&epage=2121&date=1996&atitle=Planar+microwave+devices+fabricated+by+ion-implantation+patterning+of+high-temperature+superconductors+en_HK
dc.identifier.emailMa, Q: qyma@eee.hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.116899en_HK
dc.identifier.scopuseid_2-s2.0-0030246660-
dc.identifier.hkuros26495-
dc.identifier.volume69-
dc.identifier.issue14-
dc.identifier.spage2119-
dc.identifier.epage2121-
dc.identifier.isiWOS:A1996VJ78300044-
dc.identifier.issnl0003-6951-

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