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Article: Indium tin oxide surface treatments for improvement of organic light-emitting diode performance

TitleIndium tin oxide surface treatments for improvement of organic light-emitting diode performance
Authors
Li, CNDjurišić, ABKwong, CYLai, PTChan, WKLiu, SY
Issue Date2005
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2005, v. 80 n. 2, p. 301-307 How to Cite?
DOI: http://dx.doi.org/10.1007/s00339-003-2146-0
AbstractWe have systematically investigated the influence of UV ozone and acid (HCl) treatments (separate and combined) of the surface of indium tin oxide (ITO) on the ITO parameters and the performance of organic light-emitting diodes (OLEDs) fabricated on the treated substrates. The ITO substrates were characterized by Hall measurements, Seebeck coefficient measurements and surface-probe microscopy. After ITO characterization, two types of devices (ITO/NPB/rubrene/Alq3/LiF/Al and ITO/TPD/rubrene/Alq 3/LiF/Al) were fabricated on the differently treated substrates. It was found that in both cases the optimal treatment was HCl followed by UV ozone, which resulted in the lowest turn-on voltage and the highest luminous efficiency. The maximum luminous efficiency in the ITO/NPB/rubrene/Alq 3/LiF/Al OLED with HCl followed by UV ozone treatment was 2.15 lm/W compared to 1.46 lm/W with UV ozone treatment only.
Persistent Identifierhttp://hdl.handle.net/10722/69189
ISSN
0947-8396
2021 Impact Factor: 2.983
2020 SCImago Journal Rankings: 0.485
ISI Accession Number ID
WOS:000225864600018
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, CNen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorKwong, CYen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorLiu, SYen_HK
dc.date.accessioned2010-09-06T06:11:23Z-
dc.date.available2010-09-06T06:11:23Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2005, v. 80 n. 2, p. 301-307en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/69189-
dc.description.abstractWe have systematically investigated the influence of UV ozone and acid (HCl) treatments (separate and combined) of the surface of indium tin oxide (ITO) on the ITO parameters and the performance of organic light-emitting diodes (OLEDs) fabricated on the treated substrates. The ITO substrates were characterized by Hall measurements, Seebeck coefficient measurements and surface-probe microscopy. After ITO characterization, two types of devices (ITO/NPB/rubrene/Alq3/LiF/Al and ITO/TPD/rubrene/Alq 3/LiF/Al) were fabricated on the differently treated substrates. It was found that in both cases the optimal treatment was HCl followed by UV ozone, which resulted in the lowest turn-on voltage and the highest luminous efficiency. The maximum luminous efficiency in the ITO/NPB/rubrene/Alq 3/LiF/Al OLED with HCl followed by UV ozone treatment was 2.15 lm/W compared to 1.46 lm/W with UV ozone treatment only.en_HK
dc.languageengen_HK
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.titleIndium tin oxide surface treatments for improvement of organic light-emitting diode performanceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0947-8396&volume=80&spage=301&epage=307&date=2005&atitle=Indium+tin+oxide+surface+treatments+for+improvement+of+organic+light-emitting diode+performanceen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s00339-003-2146-0en_HK
dc.identifier.scopuseid_2-s2.0-10844288135en_HK
dc.identifier.hkuros97029en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-10844288135&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume80en_HK
dc.identifier.issue2en_HK
dc.identifier.spage301en_HK
dc.identifier.epage307en_HK
dc.identifier.isiWOS:000225864600018-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLi, CN=8570971400en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridKwong, CY=35917741900en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridLiu, SY=7409465380en_HK
dc.identifier.issnl0947-8396-

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