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Article: Fabrication of natural diamond microlenses by plasma etching

TitleFabrication of natural diamond microlenses by plasma etching
Authors
Issue Date2005
PublisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspx
Citation
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2005, v. 23 n. 1, p. 130-132 How to Cite?
AbstractAdvantageous properties including optical transparency, high thermal conductivity, and high carrier mobility make natural diamond an attractive choice for a range of optical and electrical devices. However, its hardness and chemical inertness provide a significant challenge for device processing. We demonstrate the ability to etch natural type IIa diamond using inductively coupled plasma etching with a significant etch rate of 228 nmmin. The etched surfaces were characterized by atomic force microscopy and found to have a root-mean-square roughness of below 3 nm. Using the photoresist reflow technique, refractive microlens arrays, with diameters ranging from 10 to 100 μm, were fabricated on the same diamond substrates. The lenses were characterized by confocal microscopy, which showed that their focal lengths, ranging from 5 to 500 μm, were in excellent agreement with the predicted values, demonstrating the high fidelity of the fabrication process. © 2005 American Vacuum Society.
Persistent Identifierhttp://hdl.handle.net/10722/73490
ISSN
2018 Impact Factor: 1.351
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorGu, Een_HK
dc.contributor.authorLiu, Cen_HK
dc.contributor.authorGriffin, Cen_HK
dc.contributor.authorGirkin, JMen_HK
dc.contributor.authorWatson, IMen_HK
dc.contributor.authorDawson, MDen_HK
dc.date.accessioned2010-09-06T06:51:49Z-
dc.date.available2010-09-06T06:51:49Z-
dc.date.issued2005en_HK
dc.identifier.citationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2005, v. 23 n. 1, p. 130-132-
dc.identifier.issn1071-1023en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73490-
dc.description.abstractAdvantageous properties including optical transparency, high thermal conductivity, and high carrier mobility make natural diamond an attractive choice for a range of optical and electrical devices. However, its hardness and chemical inertness provide a significant challenge for device processing. We demonstrate the ability to etch natural type IIa diamond using inductively coupled plasma etching with a significant etch rate of 228 nmmin. The etched surfaces were characterized by atomic force microscopy and found to have a root-mean-square roughness of below 3 nm. Using the photoresist reflow technique, refractive microlens arrays, with diameters ranging from 10 to 100 μm, were fabricated on the same diamond substrates. The lenses were characterized by confocal microscopy, which showed that their focal lengths, ranging from 5 to 500 μm, were in excellent agreement with the predicted values, demonstrating the high fidelity of the fabrication process. © 2005 American Vacuum Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspxen_HK
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen_HK
dc.titleFabrication of natural diamond microlenses by plasma etchingen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-5347&volume=23&spage=130&epage=&date=2005&atitle=Fabrication+of+Natural+Diamond+Microlenses+by+Plasma+Etchingen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1116/1.1843826en_HK
dc.identifier.scopuseid_2-s2.0-20444447839en_HK
dc.identifier.hkuros102789en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-20444447839&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume23en_HK
dc.identifier.issue1en_HK
dc.identifier.spage130en_HK
dc.identifier.epage132en_HK
dc.identifier.isiWOS:000227300900024-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridGu, E=7004420026en_HK
dc.identifier.scopusauthoridLiu, C=36064477300en_HK
dc.identifier.scopusauthoridGriffin, C=8732304400en_HK
dc.identifier.scopusauthoridGirkin, JM=6701651108en_HK
dc.identifier.scopusauthoridWatson, IM=24482692400en_HK
dc.identifier.scopusauthoridDawson, MD=7203061779en_HK
dc.identifier.issnl1071-1023-

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