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Article: Exposure of defects in GaN by plasma etching

TitleExposure of defects in GaN by plasma etching
Authors
Choi, HWLiu, CCheong, MGZhang, JChua, SJ
Issue Date2005
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2005, v. 80 n. 2, p. 405-407 How to Cite?
DOI: http://dx.doi.org/10.1007/s00339-003-2372-5
AbstractThe effect of plasma exposure to n-type GaN surfaces has been examined. Etch pits are formed as a result of preferential sputtering at the sites of threading dislocations. Dark spots which are visible before plasma exposure can be attributed to screw dislocations, while those that emerge after plasma exposure are edge dislocations. The optimum condition for revealing defects clearly is derived, and has been adopted for the study of dislocations in a series of GaN epilayers grown under different conditions. A distinct trend in the dislocation density can be observed as the dopant concentration of the film varies.
Persistent Identifierhttp://hdl.handle.net/10722/73558
ISSN
0947-8396
2022 Impact Factor: 2.7
2020 SCImago Journal Rankings: 0.485
ISI Accession Number ID
WOS:000225864600036
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorLiu, Cen_HK
dc.contributor.authorCheong, MGen_HK
dc.contributor.authorZhang, Jen_HK
dc.contributor.authorChua, SJen_HK
dc.date.accessioned2010-09-06T06:52:30Z-
dc.date.available2010-09-06T06:52:30Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2005, v. 80 n. 2, p. 405-407en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73558-
dc.description.abstractThe effect of plasma exposure to n-type GaN surfaces has been examined. Etch pits are formed as a result of preferential sputtering at the sites of threading dislocations. Dark spots which are visible before plasma exposure can be attributed to screw dislocations, while those that emerge after plasma exposure are edge dislocations. The optimum condition for revealing defects clearly is derived, and has been adopted for the study of dislocations in a series of GaN epilayers grown under different conditions. A distinct trend in the dislocation density can be observed as the dopant concentration of the film varies.en_HK
dc.languageengen_HK
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.titleExposure of defects in GaN by plasma etchingen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0947-8396&volume=80&spage=405&epage=&date=2005&atitle=Exposure+of+Defects+in+GaN+by+Plasma+Etchingen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s00339-003-2372-5en_HK
dc.identifier.scopuseid_2-s2.0-10644285671en_HK
dc.identifier.hkuros102790en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-10644285671&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume80en_HK
dc.identifier.issue2en_HK
dc.identifier.spage405en_HK
dc.identifier.epage407en_HK
dc.identifier.isiWOS:000225864600036-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridLiu, C=36064477300en_HK
dc.identifier.scopusauthoridCheong, MG=7006837761en_HK
dc.identifier.scopusauthoridZhang, J=16403575100en_HK
dc.identifier.scopusauthoridChua, SJ=35516064500en_HK
dc.identifier.issnl0947-8396-

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