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Article: ZnO nanorods on in-situ synthesized ZnSe grains

TitleZnO nanorods on in-situ synthesized ZnSe grains
Authors
Choy, WCHGuo, CFPang, GKHLeung, YPWang, GZCheah, KW
KeywordsChemical Vapor Deposition
II-VI Semiconductor Nanostructures
Photoluminescence
ZnO Nanorods
ZnO-ZnSe
Issue Date2006
PublisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/
Citation
Journal Of Nanoscience And Nanotechnology, 2006, v. 6 n. 3, p. 802-806 How to Cite?
DOI: http://dx.doi.org/10.1166/jnn.2006.106
AbstractThe ZnO nanorods grown on in-situ synthesized ZnSe grains through the chemical vapour deposition method are reported here for the first time. With a suitable growth condition, single crystal ZnO nanorods grow on the well-defined bounded facets of the random shape ZnSe grains using Zn and Se powders without any metal catalyst. The growth direction of ZnSe nanorods on a facet of a ZnSe grain is quite uniform. The synthesis mechanism of the ZnO nanorods on the ZnSe grains is proposed. The effects of the Se powder usage on the ZnO-ZnSe products and the photoluminescence of the products are investigated. Copyright © 2006 American Scientific Publishers All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/73875
ISSN
1533-4880
2019 Impact Factor: 1.134
2019 SCImago Journal Rankings: 0.235
ISI Accession Number ID
WOS:000235941500034
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorGuo, CFen_HK
dc.contributor.authorPang, GKHen_HK
dc.contributor.authorLeung, YPen_HK
dc.contributor.authorWang, GZen_HK
dc.contributor.authorCheah, KWen_HK
dc.date.accessioned2010-09-06T06:55:36Z-
dc.date.available2010-09-06T06:55:36Z-
dc.date.issued2006en_HK
dc.identifier.citationJournal Of Nanoscience And Nanotechnology, 2006, v. 6 n. 3, p. 802-806en_HK
dc.identifier.issn1533-4880en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73875-
dc.description.abstractThe ZnO nanorods grown on in-situ synthesized ZnSe grains through the chemical vapour deposition method are reported here for the first time. With a suitable growth condition, single crystal ZnO nanorods grow on the well-defined bounded facets of the random shape ZnSe grains using Zn and Se powders without any metal catalyst. The growth direction of ZnSe nanorods on a facet of a ZnSe grain is quite uniform. The synthesis mechanism of the ZnO nanorods on the ZnSe grains is proposed. The effects of the Se powder usage on the ZnO-ZnSe products and the photoluminescence of the products are investigated. Copyright © 2006 American Scientific Publishers All rights reserved.en_HK
dc.languageengen_HK
dc.publisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/en_HK
dc.relation.ispartofJournal of Nanoscience and Nanotechnologyen_HK
dc.subjectChemical Vapor Depositionen_HK
dc.subjectII-VI Semiconductor Nanostructuresen_HK
dc.subjectPhotoluminescenceen_HK
dc.subjectZnO Nanorodsen_HK
dc.subjectZnO-ZnSeen_HK
dc.titleZnO nanorods on in-situ synthesized ZnSe grainsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1533-4880&volume=6&spage=802&epage=&date=2006&atitle=ZnO+Nanorods+on+In-situ+Synthesized+ZnSe+Grainsen_HK
dc.identifier.emailChoy, WCH: chchoy@eee.hku.hken_HK
dc.identifier.emailLeung, YP: ypleung@alumni.cuhk.neten_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.identifier.authorityLeung, YP=rp00145en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1166/jnn.2006.106en_HK
dc.identifier.pmid16573141-
dc.identifier.scopuseid_2-s2.0-33645986168en_HK
dc.identifier.hkuros122522en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33645986168&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume6en_HK
dc.identifier.issue3en_HK
dc.identifier.spage802en_HK
dc.identifier.epage806en_HK
dc.identifier.isiWOS:000235941500034-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridGuo, CF=55228903200en_HK
dc.identifier.scopusauthoridPang, GKH=7103393249en_HK
dc.identifier.scopusauthoridLeung, YP=8351421700en_HK
dc.identifier.scopusauthoridWang, GZ=7407621257en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.citeulike502532-
dc.identifier.issnl1533-4880-

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