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Article: An analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon film

TitleAn analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon film
Authors
Wu, ZHLai, PTLi, BKwok, PCKLiu, BYZheng, XR
KeywordsMinority-carrier exclusion
Silicon film
Temperature sensor
Two-dimensional model
Issue Date2005
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2005, v. 49 n. 1, p. 25-30 How to Cite?
DOI: http://dx.doi.org/10.1016/j.sse.2004.07.005
AbstractAn analytical two-dimensional model is developed to explain the minority-carrier exclusion effect in circular spreading-resistance temperature (SRT) sensor fabricated on thin silicon film. The model can be used to show the relation between minority-carrier exclusion length and maximum operating temperature of the sensor under different bias currents and different doping levels. Comparison is made between the proposed model and the conventional one-dimensional model used for similar sensors with rectangular shape. Experimental results show that the new model is more accurate than the one-dimensional model for predicting the characteristics of the circular SRT sensor. © 2004 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/74022
ISSN
0038-1101
2023 Impact Factor: 1.4
2023 SCImago Journal Rankings: 0.348
ISI Accession Number ID
WOS:000225719100004
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWu, ZHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, Ben_HK
dc.contributor.authorKwok, PCKen_HK
dc.contributor.authorLiu, BYen_HK
dc.contributor.authorZheng, XRen_HK
dc.date.accessioned2010-09-06T06:57:03Z-
dc.date.available2010-09-06T06:57:03Z-
dc.date.issued2005en_HK
dc.identifier.citationSolid-State Electronics, 2005, v. 49 n. 1, p. 25-30en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/74022-
dc.description.abstractAn analytical two-dimensional model is developed to explain the minority-carrier exclusion effect in circular spreading-resistance temperature (SRT) sensor fabricated on thin silicon film. The model can be used to show the relation between minority-carrier exclusion length and maximum operating temperature of the sensor under different bias currents and different doping levels. Comparison is made between the proposed model and the conventional one-dimensional model used for similar sensors with rectangular shape. Experimental results show that the new model is more accurate than the one-dimensional model for predicting the characteristics of the circular SRT sensor. © 2004 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.subjectMinority-carrier exclusionen_HK
dc.subjectSilicon filmen_HK
dc.subjectTemperature sensoren_HK
dc.subjectTwo-dimensional modelen_HK
dc.titleAn analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon filmen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0038-1101&volume=49&spage=25&epage=30&date=2005&atitle=An+analytical+two-dimensional+model+for+circular+spreading-resistance+temperature+sensor+based+on+thin+silicon+filmen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.sse.2004.07.005en_HK
dc.identifier.scopuseid_2-s2.0-9544230706en_HK
dc.identifier.hkuros103251en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-9544230706&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume49en_HK
dc.identifier.issue1en_HK
dc.identifier.spage25en_HK
dc.identifier.epage30en_HK
dc.identifier.isiWOS:000225719100004-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridWu, ZH=7501411463en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, B=26643217800en_HK
dc.identifier.scopusauthoridKwok, PCK=7101871278en_HK
dc.identifier.scopusauthoridLiu, BY=7408690364en_HK
dc.identifier.scopusauthoridZheng, XR=7404091424en_HK
dc.identifier.issnl0038-1101-

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