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Article: A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects

TitleA 2D threshold-voltage model for small MOSFET with quantum-mechanical effects
Authors
Xu, JPLi, YPLai, PTChen, WBXu, SGGuan, JG
Issue Date2008
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2008, v. 48 n. 1, p. 23-28 How to Cite?
DOI: http://dx.doi.org/10.1016/j.microrel.2006.12.007
AbstractA threshold condition different from the classical one is proposed for MOSFET with quantum effects, and is based on self-consistent numerical solution of the Schrödinger's and Poisson's equations. Furthermore, an accurate 1D threshold-voltage model including polysilicon-depletion effects is built by experimental fitting. Simulated results exhibit good agreement with measurement data. Based on this 1D model, a 2D quantum-modified threshold-voltage model for small MOSFET is developed by solving the quasi-2D Poisson's equation and taking short-channel effects and quantum-mechanical effects into consideration. The model can also be used for deep-submicron MOSFET with high-k gate-dielectric and reasonable design of device parameters. © 2007 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/74111
ISSN
0026-2714
2023 Impact Factor: 1.6
2023 SCImago Journal Rankings: 0.394
ISI Accession Number ID
WOS:000254372300003
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLi, YPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChen, WBen_HK
dc.contributor.authorXu, SGen_HK
dc.contributor.authorGuan, JGen_HK
dc.date.accessioned2010-09-06T06:57:55Z-
dc.date.available2010-09-06T06:57:55Z-
dc.date.issued2008en_HK
dc.identifier.citationMicroelectronics Reliability, 2008, v. 48 n. 1, p. 23-28en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/74111-
dc.description.abstractA threshold condition different from the classical one is proposed for MOSFET with quantum effects, and is based on self-consistent numerical solution of the Schrödinger's and Poisson's equations. Furthermore, an accurate 1D threshold-voltage model including polysilicon-depletion effects is built by experimental fitting. Simulated results exhibit good agreement with measurement data. Based on this 1D model, a 2D quantum-modified threshold-voltage model for small MOSFET is developed by solving the quasi-2D Poisson's equation and taking short-channel effects and quantum-mechanical effects into consideration. The model can also be used for deep-submicron MOSFET with high-k gate-dielectric and reasonable design of device parameters. © 2007 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleA 2D threshold-voltage model for small MOSFET with quantum-mechanical effectsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0026-2714&volume=48&spage=23&epage=28&date=2008&atitle=A+2-D+Threshold-Voltage+Model+for+Small+MOSFET+with+Quantum-Mechanical+Effectsen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.microrel.2006.12.007en_HK
dc.identifier.scopuseid_2-s2.0-39149113844en_HK
dc.identifier.hkuros150281en_HK
dc.identifier.hkuros143456-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-39149113844&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume48en_HK
dc.identifier.issue1en_HK
dc.identifier.spage23en_HK
dc.identifier.epage28en_HK
dc.identifier.isiWOS:000254372300003-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLi, YP=8704252400en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChen, WB=15119171500en_HK
dc.identifier.scopusauthoridXu, SG=14055300000en_HK
dc.identifier.scopusauthoridGuan, JG=7201449685en_HK
dc.identifier.issnl0026-2714-

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