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Conference Paper: Effects of Annealing on Oxide Thermally Grown on GaN Film as Gate Dielectric

TitleEffects of Annealing on Oxide Thermally Grown on GaN Film as Gate Dielectric
Authors
Issue Date2005
Citation
Regional Inter-University Postgraduate Electrical and Electronic Engineering Conference (RIUPEEEC), Hong Kong, 14-15 July 2005. In Proceedings of RIUPEEEC, 2005 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/99190

 

DC FieldValueLanguage
dc.contributor.authorLin, Len_HK
dc.contributor.authorLuo, Yen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLau, KMen_HK
dc.date.accessioned2010-09-25T18:19:30Z-
dc.date.available2010-09-25T18:19:30Z-
dc.date.issued2005en_HK
dc.identifier.citationRegional Inter-University Postgraduate Electrical and Electronic Engineering Conference (RIUPEEEC), Hong Kong, 14-15 July 2005. In Proceedings of RIUPEEEC, 2005-
dc.identifier.urihttp://hdl.handle.net/10722/99190-
dc.languageengen_HK
dc.relation.ispartofProceedings of RIUPEEECen_HK
dc.titleEffects of Annealing on Oxide Thermally Grown on GaN Film as Gate Dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLuo, Y: mygrapeff@hotmail.comen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.hkuros120777en_HK

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