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Conference Paper: Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric

TitleEffects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Authors
Li, CXLai, PTXu, JPZou, X
KeywordsGas annealing
Ge mos
High-k dielectric
Issue Date2007
Citation
Ieee Conference On Electron Devices And Solid-State Circuits 2007, Edssc 2007, 2007, p. 185-188 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2007.4450093
AbstractIn this work, Ge MOS capacitors with HfTiON as high-k gate dielectric are fabricated. The impacts of different annealings in wet N 2, wet NH 3, wet N 2O and wet NO on the electrical and reliability properties of Ge MOS capacitors are investigated. Experimental results show that the wet NO annealing produces the best electrical properties and reliability for the Ge MOS devices. © 2007 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/99421
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorZou, Xen_HK
dc.date.accessioned2010-09-25T18:29:25Z-
dc.date.available2010-09-25T18:29:25Z-
dc.date.issued2007en_HK
dc.identifier.citationIeee Conference On Electron Devices And Solid-State Circuits 2007, Edssc 2007, 2007, p. 185-188en_HK
dc.identifier.urihttp://hdl.handle.net/10722/99421-
dc.description.abstractIn this work, Ge MOS capacitors with HfTiON as high-k gate dielectric are fabricated. The impacts of different annealings in wet N 2, wet NH 3, wet N 2O and wet NO on the electrical and reliability properties of Ge MOS capacitors are investigated. Experimental results show that the wet NO annealing produces the best electrical properties and reliability for the Ge MOS devices. © 2007 IEEE.en_HK
dc.languageengen_HK
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007en_HK
dc.subjectGas annealingen_HK
dc.subjectGe mosen_HK
dc.subjectHigh-k dielectricen_HK
dc.titleEffects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/EDSSC.2007.4450093en_HK
dc.identifier.scopuseid_2-s2.0-43049174782en_HK
dc.identifier.hkuros150351en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-43049174782&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage185en_HK
dc.identifier.epage188en_HK
dc.identifier.scopusauthoridLi, CX=13906721600en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=35754128700en_HK
dc.identifier.scopusauthoridZou, X=23020170400en_HK

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