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Conference Paper: A novel technique of N2O-treatment on NH3-nitrided oxide for fabricating gate oxide in nMOSFET's

TitleA novel technique of N2O-treatment on NH3-nitrided oxide for fabricating gate oxide in nMOSFET's
Authors
Zeng, XLai, PTNg, WT
KeywordsEngineering
Electrical engineering
Issue Date1995
PublisherIEEE.
Citation
Proceedings of the 4th International Conference on VLSI and CAD (ICVC '95), Seoul, Korea, 15-18 October 1995, p. 303-306 How to Cite?
AbstractA new technique of N2O treatment on NH3-nitrided oxide is used to prepare thin gate oxide. Experiments on MOS capacitors and nMOSFET’s shows that N2O treatment is superior to conventional reoxidation step in suppressing electron trapping and interface trap creation under high-field stress.
Persistent Identifierhttp://hdl.handle.net/10722/99653

 

DC FieldValueLanguage
dc.contributor.authorZeng, X-
dc.contributor.authorLai, PT-
dc.contributor.authorNg, WT-
dc.date.accessioned2010-09-25T18:39:00Z-
dc.date.available2010-09-25T18:39:00Z-
dc.date.issued1995-
dc.identifier.citationProceedings of the 4th International Conference on VLSI and CAD (ICVC '95), Seoul, Korea, 15-18 October 1995, p. 303-306-
dc.identifier.urihttp://hdl.handle.net/10722/99653-
dc.description.abstractA new technique of N2O treatment on NH3-nitrided oxide is used to prepare thin gate oxide. Experiments on MOS capacitors and nMOSFET’s shows that N2O treatment is superior to conventional reoxidation step in suppressing electron trapping and interface trap creation under high-field stress.-
dc.languageeng-
dc.publisherIEEE.-
dc.relation.ispartofInternational Conference on VLSI and CAD Proceedings-
dc.rightsInternational Conference on VLSI and CAD Proceedings. Copyright © IEEE.-
dc.subjectEngineering-
dc.subjectElectrical engineering-
dc.titleA novel technique of N2O-treatment on NH3-nitrided oxide for fabricating gate oxide in nMOSFET's-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.emailNg, WT: ngwt@vrg.utoronto.ca-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.hkuros12531-
dc.identifier.hkuros240609-
dc.identifier.spage303-
dc.identifier.epage306-
dc.publisher.placeUnited States-

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