Browsing by Author Fong, WK

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Showing results 1 to 9 of 9
TitleAuthor(s)Issue DateViews
 
Degradation mechanism of GaN-based LEDs with different growth parameters
Journal:Materials Research Society Symposium Proceedings
Leung, KKFong, WKChan, PKLSurya, C
2010
141
 
Doping of GaN by Mg diffusion
Proceeding/Conference:Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
To, TDjurisic, ABXie, MHFong, WKSurya, C
2002
104
 
Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs
Journal:Solid-State Electronics
Surya, CWang, WFong, WKChan, CHLai, PT
1996
125
 
Effects of low-energy back surface gettering on the properties of 1/f noise in n-channel nitrided MOSFETs
Proceeding/Conference:IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Surya, CharlesWang, WFong, WKChan, CHLai, PT
1997
113
 
Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors
Journal:Physica Status Solidi (C) Current Topics in Solid State Physics
Lui, HFFong, WKSurya, CCheung, CHDjurišić, AB
2006
144
 
Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
Journal:Solid-State Electronics
Zhang, ZWZhu, CFFong, WKLeung, KKChan, PKLSurya, C
2011
 
Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
Journal:Solid-State Electronics
Zhang, ZWZhu, CFFong, WKLeung, KKChan, KLSurya, C
2011
1
 
Physical mechanisms for hot-electron degradation in GaN light-emitting diodes
Journal:Journal of Applied Physics
Leung, KKFong, WKChan, PKLSurya, C
2010
171
 
Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs
Proceeding/Conference:I E E E Hong Kong Electron Devices Meeting Proceedings
Surya, CWang, WFong, WKChan, CHLai, PT
1996
177
Showing results 1 to 9 of 9