Showing results 5 to 11 of 11
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Title | Author(s) | Issue Date | |
---|---|---|---|
Positron deep level transient spectroscopy - A new application of positron annihilation to semiconductor physics Journal:Applied Surface Science | 1997 | ||
Positron mobility and interface defect studies in semi-insulating GaAs using the lifetime technique Proceeding/Conference:Materials Science Forum | 1995 | ||
Positron transport studies at the Au-(InP: Fe) interface Journal:Journal of Physics Condensed Matter | 1996 | ||
Reverse I-V characteristics of Au/semi-insulating InP (100) Journal:Semiconductor Science and Technology | 1993 | ||
Semi-insulating GaAs: A possible substrate for a field-assisted positron moderator Journal:Applied Physics A Solids and Surfaces | 1994 | ||
A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes Journal:Journal of Applied Physics | 1992 | ||
Temperature dependence of the ideality factor of GaAs and Si Schottky diodes Journal:Physica Status Solidi (A) Applied Research | 1995 |