Showing results 1 to 18 of 18
Title | Author(s) | Issue Date | Views | |
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A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | 2006 | 98 | ||
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects Journal:Microelectronics Reliability | 2008 | 91 | ||
2015 | 49 | |||
Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric Proceeding/Conference:IEEE Electron Device Letters | 2011 | 108 | ||
Electrical Characteristics of Ge MOS Capacitor with HfTiON as Gate Dielectric Proceeding/Conference:Proceedings of RIUPEEEC | 2006 | 76 | ||
2006 | ||||
2007 | 63 | |||
2016 | 48 | |||
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric Journal:Microelectronics Reliability | 2007 | 77 | ||
Gate leakage properties of MOS devices with TriLayer high-k gate dielectric Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | 2006 | 90 | ||
Improved efficiency of organic photovoltaic MEH-PPV/PCBM device with CuPc-doping Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 | 2010 | 81 | ||
Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 | 2010 | 61 | ||
Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3 Proceeding/Conference:ECS Transactions | 2010 | 51 | ||
Improving efficiency of organic photovoltaic cells with pentacene-doped CuPc layer Journal:Applied Physics Letters | 2007 | 106 | ||
2012 | 96 | |||
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients Proceeding/Conference:Proceedings of the International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2006 | 2007 | 59 | ||
Threshold voltage model of SiGe channel pMOSFET without Si cap layer Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | 2006 | 57 | ||
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer Journal:Microelectronics Reliability | 2007 | 94 |