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Browsing by Author Li, GQ
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Showing results 20 to 30 of 30
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Title
Author(s)
Issue Date
Photo-, thermal and humidity sensitivity characteristics of sr1-xLaxTiO3 film on SiO2/Si substrate
Journal:
Sensors and Actuators, A: Physical
Li, GQ
Lai, PT
Zeng, SH
Huang, MQ
Cheng, YC
1997
Photoelectrical properties of Ba1-xLaxTiO3 thin-film resistor
Journal:
Sensors and Actuators, A: Physical
Li, B
Lai, PT
Li, GQ
Zeng, SH
Huang, MQ
2000
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
Journal:
Applied Physics Letters
Xu, SJ
Li, GQ
Wang, YJ
Zhao, Y
Chen, GH
Zhao, DG
Zhu, JJ
Yang, H
Yu, DP
Wang, JN
2006
Sensing properties of Ba1-xLaxNbyTi1-yO3 (x=0.25%, y=0.25%) thin-film on SiO2/Si substrate
Journal:
Materials Research Society Symposium - Proceedings
Li, B
Lai, PT
Li, GQ
Zeng, SH
Huang, MQ
2001
Spectral features of LO phonon sidebands in luminescence of free excitons in GaN
Journal:
Journal of Chemical Physics
Xu, SJ
Li, GQ
Xiong, SJ
Tong, SY
Che, CM
Liu, W
Li, MF
2005
A study of various oxide/silicon interfaces by Ar + backsurface bombardment
Journal:
Journal of Applied Physics
Lai, PT
Li, GQ
Huang, MQ
Zeng, SH
Cheng, YC
1999
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Journal:
Microelectronics Reliability
Huang, MQ
Lai, PT
Xu, JP
Zeng, SH
Li, GQ
Cheng, YC
1998
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Proceeding/Conference:
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Huang, MQ
Lai, PT
Xu, JP
Zeng, SH
Li, GQ
Cheng, YC
1997
Temperature dependence of the LO phonon sidebands in free exciton emission of GaN
Journal:
Journal of Applied Physics
Xu, SJ
Li, GQ
Xiong, SJ
Che, CM
2006
Thin-film NTC resistor based on SrNbxTi1-xO3
Proceeding/Conference:
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Lai, PT
Li, Bin
Li, GQ
1999
Two-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells
Journal:
Applied Physics Letters
Li, Q
Xu, SJ
Li, GQ
Dai, DC
Che, CM
2006