Showing results 1 to 5 of 5
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor Journal:Physica Status Solidi - Rapid Research Letters | 2016 | 83 | ||
Impacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric Proceeding/Conference:IEEE Semiconductor Interface Specialists Conference | 2016 | 27 | ||
Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) | 2016 | 51 | ||
Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) | 2017 | 12 | ||
Structure and assembly of cargo Rubisco in two native α-carboxysomes Journal:Nature Communications | 25-Jul-2022 |