Showing results 3 to 8 of 8
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Title | Author(s) | Issue Date | |
---|---|---|---|
1992 | |||
Initial stage of GaN growth and its implication to defect formation in films Journal:Physical Review B (Condensed Matter) | 2001 | ||
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy Journal:Applied Physics Letters | 2000 | ||
1993 | |||
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy Journal:Physical Review B (Condensed Matter) | 2000 | ||
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters | 1993 |