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Showing results 1 to 15 of 15

	Title	Author(s)	Issue Date	Views
	Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers Journal:Applied Physics Letters	Wang, YJ Xu, SJ Li, Q Zhao, DG Yang, H	2006	75
	Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration? Journal:Applied Physics Letters	Zheng, CC Xu, S Zhang, F Ning, J Zhao, DG Yang, H Che, CM	2012	82
	Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates Journal:RSC Advances	Zheng, C Ning, J Wu, Z Wang, JF Zhao, DG Xu, K Gao, J Xu, S	2014	59
	Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts Journal:Applied Physics Letters	Wang, RX Xu, SJ Djurišić, AB Beling, CD Cheung, CK Cheung, CH Fung, S Zhao, DG Yang, H Tao, XM	2006	84
	Luminescence imaging and blinking behavior of individual InGaN nanoclusters formed in GaN matrix Proceeding/Conference:Progress in Electromagnetics Research Symposium Abstracts	Xu, SJ Zhao, DG Yang, H	2010	11
	Mineral chemistry of chromite from the Permian Jinbaoshan Pt-Pd-sulphide-bearing ultamafic intrusion in SW China with petrogenetic implications Proceeding/Conference:IGCP479 Hong Kong Workshop-Conference	Wang, CY Zhou, MF Zhao, DG	2004	45
	Morphology and composition of a foreign iron fragment inside a human body Proceeding/Conference:The General Meeting of the International Mineralogical Association	Zhao, DG Zhou, MF	2002	45
	Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: The role of localization length Journal:Optics Express	Wang, YJ Xu, SJ Zhao, DG Zhu, JJ Yang, H Shan, XD Yu, DP	2006	81
	Optical properties of light-hole excitons in GaN epilayers Journal:Journal of Applied Physics	Zhang, F Xu, SJ Ning, JQ Zheng, CC Zhao, DG Yang, H Che, CM	2010	90
	Petrogenetic significance of chromite from the Jinbaoshan Pt-Pd-sulphide-bearing ultramafic sill within the Emeishan Large Igneous Province, Yunnan, SW China Proceeding/Conference:Chinese Geo-conference	Wang, CY Zhou, MF Zhao, DG	2004	36
	Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contacts Journal:Applied Physics Letters	Wang, RX Xu, SJ Shi, SL Beling, CD Fung, S Zhao, DG Yang, H Tao, XM	2006	99
	Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots Journal:Applied Physics Letters	Xu, SJ Li, GQ Wang, YJ Zhao, Y Chen, GH Zhao, DG Zhu, JJ Yang, H Yu, DP Wang, JN	2006	85
	Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire Journal:Applied Physics Letters	Zhao, DG Xu, SJ Xie, MH Tong, SY Yang, H	2003	154
	Temperature and pressure constraints on formation of mafic-ultramafic intrusions from the Emeishan large igneous province, SW China Proceeding/Conference:IGCP479 Hong Kong Workshop-Conference	Zhao, DG Zhou, MF Wang, CY	2004	33
	Violet electroluminescence of AlInGaN-InGaN multiquantum-well light-emitting diodes: Quantum-confined stark effect and heating effect Journal:IEEE Photonics Technology Letters	Li, J Shi, SL Wang, YJ Xu, SJ Zhao, DG Zhu, JJ Yang, H Lu, F	2007	84

Showing results 1 to 15 of 15