|
zno |
8 |
|
dlts |
6 |
|
nanorod |
5 |
|
pas |
5 |
|
pl |
5 |
|
schottky contact |
5 |
|
xps |
5 |
|
4h-silicon carbide |
4 |
|
contamination |
4 |
|
deep level transient spectroscopy |
4 |
|
defects |
4 |
|
field assisted moderator |
4 |
|
ohmic contacts |
4 |
|
positron annihilation spectroscopy |
4 |
|
positron mobility |
4 |
|
semi-insulating |
4 |
|
x ray photoelectron spectroscopy |
4 |
|
annealing |
3 |
|
breakdown |
3 |
|
buffer layer |
3 |
|
channel electron multiplier |
3 |
|
chemical vapour deposition |
3 |
|
compensation defects |
3 |
|
conversion efficiency |
3 |
|
deep level |
3 |
|
deep level spectroscopy |
3 |
|
defect |
3 |
|
electrical and optical property |
3 |
|
ferroelectric response |
3 |
|
gan |
3 |
|
high-density polyethylene |
3 |
|
hydrothermal treatments |
3 |
|
lec-grown inp |
3 |
|
low temperature |
3 |
|
martensitic transformation |
3 |
|
maximum entropy |
3 |
|
melt |
3 |
|
metastability |
3 |
|
monte carlo |
3 |
|
morphology |
3 |
|
n-nanorods |
3 |
|
nanostructures |
3 |
|
optical cross-section |
3 |
|
oxides |
3 |
|
photoluminsescence |
3 |
|
physics engineering |
3 |
|
polarity control |
3 |
|
positron annihilation |
3 |
|
positron beam |
3 |
|
positron emission |
3 |
|
positron lifetime |
3 |
|
positron lifetime spectroscopy |
3 |
|
positron moderation |
3 |
|
positronium |
3 |
|
pulsed laser deposition |
3 |
|
raman spectroscopy |
3 |
|
scanning electron microscopy |
3 |
|
second harmonic generation |
3 |
|
shape memory alloy |
3 |
|
si-gaas |
3 |
|
sic |
3 |
|
slow positron re-emission |
3 |
|
surface etching |
3 |
|
trapped electrons |
3 |
|
tungsten mesh |
3 |
|
vacancy sensing |
3 |
|
zinc oxide |
3 |
|
γ-in2se3 |
3 |
|
acceptor complex |
2 |
|
alphabet lines |
2 |
|
electron irradiation |
2 |
|
formation process |
2 |
|
hydrogen impurity |
2 |
|
low substrate temperature |
2 |
|
n-type conductivity |
2 |
|
opto-electronics |
2 |
|
p type zno |
2 |
|
p-type doping |
2 |
|
photoluminescence |
2 |
|
secondary ion mass spectroscopy |
2 |
|
silicon carbide |
2 |
|
silicon compounds |
2 |
|
6h silicon carbide |
1 |
|
a. a-zno |
1 |
|
a. c-p-mbe |
1 |
|
a. znmgo |
1 |
|
as-implantation |
1 |
|
capacitance-voltage spectra |
1 |
|
deep levels |
1 |
|
doppler broadening |
1 |
|
electron beam cured (ebc) coating |
1 |
|
epoxy-acrylates resin |
1 |
|
ferromagnetism |
1 |
|
hard carbon |
1 |
|
monte carlo simulation |
1 |
|
polyimide |
1 |
|
sb-doped zno |
1 |
|
sbpo4 |
1 |
|
semiconductor |
1 |
|
slow positron beam |
1 |
|
sodium ion batteries |
1 |
|
squid |
1 |
|
vacancy |
1 |
