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  Patent History
  • Application
    EP20060704680 2006-01-11
  • Publication
    EP 1835946 2007
  • Granted
    1835946 2010-10-27
Supplementary

published patent: Surface Treated Shape Memory Materials And Methods For Making Same

TitleSurface Treated Shape Memory Materials And Methods For Making Same
Granted Patent1835946
Granted Date2010-10-27
Priority Date2006-01-11 PCT/CN2006000038
2005-01-13 US 11/643744P
Inventors
Issue Date2010
Citation
EP Published Patent application 1835946. European Patent Office (EPO), Escapenet, 2007 How to Cite?
AbstractThe Invention Provides A Method For Making Surface Treated Shape Memory Materials Such As From Niti Alloy Using Plasma Immersion Ion Implantation And Deposition And Related Ion-Beam And Plasma-Based Techniques To Alter The Surface Properties Of Those Materials Primarily For Biomedical Applications. The Surfaces Are Treated With Nitrogen, Oxygen, And Carbon, But Become Bio-Inactive After Implanted With Other Elements Such As Silicon.
Persistent Identifierhttp://hdl.handle.net/10722/142172
References

 

DC FieldValueLanguage
dc.date.accessioned2011-10-19T06:33:29Z-
dc.date.available2011-10-19T06:33:29Z-
dc.date.issued2010-
dc.identifier.citationEP Published Patent application 1835946. European Patent Office (EPO), Escapenet, 2007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142172-
dc.description.abstractThe Invention Provides A Method For Making Surface Treated Shape Memory Materials Such As From Niti Alloy Using Plasma Immersion Ion Implantation And Deposition And Related Ion-Beam And Plasma-Based Techniques To Alter The Surface Properties Of Those Materials Primarily For Biomedical Applications. The Surfaces Are Treated With Nitrogen, Oxygen, And Carbon, But Become Bio-Inactive After Implanted With Other Elements Such As Silicon.en_HK
dc.titleSurface Treated Shape Memory Materials And Methods For Making Sameen_HK
dc.typePatenten_US
dc.identifier.emailCheung, Kenneth Man Chee:ken-cheung@hku.hken_US
dc.identifier.emailLu, William Weijia:wwlu@hkusua.hku.hken_US
dc.identifier.emailYeung, Kelvin Wai Kwok:wkkyeung@hku.hken_US
dc.identifier.authorityLu, William Weijia=rp00411en_US
dc.description.naturepublished_or_final_version-
dc.contributor.inventorYeung, W. K. Kelvinen_HK
dc.contributor.inventorPoon, W. Y. Ren_HK
dc.contributor.inventorChu, Kimho Paulen_HK
dc.contributor.inventorCheung, M. C. Kennethen_HK
dc.contributor.inventorLu, W., Williamen_HK
patents.identifier.applicationEP20060704680en_HK
patents.identifier.granted1835946en_US
patents.description.assigneeVersitech Ltd [Cn]; Univ City Hong Kong [Cn]en_HK
patents.description.countryEuropean Patent Officeen_HK
patents.date.publication2007en_HK
patents.date.granted2010-10-27en_US
dc.relation.referencesCN 1150180 (A) 1997-05-21en_HK
dc.relation.referencesCN 1045637 (C) 1999-10-13en_HK
dc.relation.referencesWO 0148262 (A1) 2001-07-05en_HK
dc.relation.referencesWO 0148262 (A8) 2002-03-14en_HK
dc.relation.referencesUS 5674293 (A) 1997-10-07en_HK
patents.identifier.hkutechidO&T-2005-00178-2en_US
patents.identifier.hkutechidO&T-2005-00178-3-
patents.identifier.hkutechidO&T-2005-00178-4-
patents.identifier.hkutechidO&T-2005-00178-6-
patents.identifier.hkutechidO&T-2005-00178-7-
patents.identifier.hkutechidO&T-2005-00178-8-
patents.identifier.hkutechidO&T-2005-00178-9-
patents.identifier.hkutechidO&T-2005-00178-10-
patents.identifier.hkutechidO&T-2005-00178-5-
patents.date.application2006-01-11en_HK
patents.date.priority2006-01-11 PCT/CN2006000038en_HK
patents.date.priority2005-01-13 US 11/643744Pen_HK
patents.description.ccEPen_HK
patents.identifier.publicationEP 1835946en_HK
patents.relation.familyAT 485845 (T) 2010-11-15en_HK
patents.relation.familyCN 101128224 (A) 2008-02-20en_HK
patents.relation.familyEP 1835946 (A1) 2007-09-26en_HK
patents.relation.familyES 2356465 (T3) 2011-04-08en_HK
patents.relation.familyUS 2006157159 (A1) 2006-07-20en_HK
patents.relation.familyUS 7803234 (B2) 2010-09-28en_HK
patents.relation.familyWO 2006074604 (A1) 2006-07-20en_HK
patents.description.kindB1en_HK
patents.typePatent_publisheden_HK

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