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  Patent History
  • Application
    US 09/008022 2001-11-05
  • Publication
    US 20020096429 2002-07-25
  • Granted
    US 6818918 2004-11-16
  Patent Family
Supplementary

granted patent: Josephson Junctions With A Continually Graded Barrier

TitleJosephson Junctions With A Continually Graded Barrier
Granted PatentUS 6818918
Granted Date2004-11-16
Priority Date2001-11-05 US 09/008022
2000-11-06 US 09/246172P
Inventors
Gao, JuSun, Jinglan
Issue Date2004
Citation
US Patent 6818918. Washington, DC: US Patent and Trademark Office (USPTO), 2004 How to Cite?
AbstractA Josephson Junction Includes First And Second Electrodes, Each Of Which Is Formed Of Superconductive Material. The First Electrode Has A First Electrode Face. A Barrier Of The Junction Extends From The First Electrode To The Second Electrode. The Barrier Has A First Barrier Face Opposing And Adjoining The First Electrode Face. The Barrier Is Formed Of Non-Superconductive Barrier Material And Superconductive Barrier Material. A Concentration Of The Superconductive Barrier Material Is Greater Than Zero At The First Barrier Face, Whereby The First Barrier Face Is Formed At Least Partially Of The Superconductive Barrier Material.
Persistent Identifierhttp://hdl.handle.net/10722/142189
References

 

DC FieldValueLanguage
dc.date.accessioned2011-10-19T06:34:31Z-
dc.date.available2011-10-19T06:34:31Z-
dc.date.issued2004-
dc.identifier.citationUS Patent 6818918. Washington, DC: US Patent and Trademark Office (USPTO), 2004en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142189-
dc.description.abstractA Josephson Junction Includes First And Second Electrodes, Each Of Which Is Formed Of Superconductive Material. The First Electrode Has A First Electrode Face. A Barrier Of The Junction Extends From The First Electrode To The Second Electrode. The Barrier Has A First Barrier Face Opposing And Adjoining The First Electrode Face. The Barrier Is Formed Of Non-Superconductive Barrier Material And Superconductive Barrier Material. A Concentration Of The Superconductive Barrier Material Is Greater Than Zero At The First Barrier Face, Whereby The First Barrier Face Is Formed At Least Partially Of The Superconductive Barrier Material.en_HK
dc.titleJosephson Junctions With A Continually Graded Barrieren_HK
dc.typePatenten_US
dc.identifier.emailGao, Ju:jugao@hku.hken_US
dc.identifier.emailSun, Jinglan:en_US
dc.identifier.authorityGao, Ju=rp00699en_US
dc.description.naturepublished_or_final_version-
dc.identifier.hkuros97296en_US
dc.contributor.inventorGao, Juen_US
dc.contributor.inventorSun, Jinglanen_US
patents.identifier.applicationUS 09/008022en_HK
patents.identifier.grantedUS 6818918en_HK
patents.description.assigneeUniv Hong Kong [Hk]en_HK
patents.description.countryUnited States of Americaen_HK
patents.date.publication2002-07-25en_HK
patents.date.granted2004-11-16en_HK
dc.relation.referencesUS 4424101 (A) 1984-01-03en_HK
dc.relation.referencesUS 4485000 (A) 1984-11-27en_HK
dc.relation.referencesUS 4834855 (A) 1989-05-30en_HK
dc.relation.referencesUS 5066381 (A) 1991-11-19en_HK
dc.relation.referencesUS 5215639 (A) 1993-06-01en_HK
dc.relation.referencesUS 5262032 (A) 1993-11-16en_HK
dc.relation.referencesUS 5372694 (A) 1994-12-13en_HK
dc.relation.referencesUS 5591314 (A) 1997-01-07en_HK
dc.relation.referencesUS 6143149 (A) 2000-11-07en_HK
patents.identifier.hkutechidPhy-2000-00037-1en_US
patents.date.application2001-11-05en_HK
patents.date.priority2001-11-05 US 09/008022en_HK
patents.date.priority2000-11-06 US 09/246172Pen_HK
patents.description.ccUSen_HK
patents.identifier.publicationUS 20020096429en_HK
patents.relation.familyUS 2002096429 (A1) 2002-07-25en_HK
patents.relation.familyUS 6818918 (B2) 2004-11-16en_HK
patents.description.kindB2en_HK
patents.typePatent_granteden_HK

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