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  Patent History
  • Application
    US 09/615382 2001-02-21
  • Granted
    US 6377477 2002-04-23
  Patent Family

granted patent: Self-Driven Synchronous Rectifier By Retention Of Gate Charge

TitleSelf-Driven Synchronous Rectifier By Retention Of Gate Charge
Granted PatentUS 6377477
Granted Date2002-04-23
Priority Date2001-02-21 US 09/615382
1999-07-16 US 09/144127P
Inventors
Issue Date2002
Citation
US Patent 6377477. Washington, DC: US Patent and Trademark Office (USPTO), 2002 How to Cite?
AbstractA Synchronous Rectifier Is Disclosed, Which Makes Use Of Gate Charge Retention Technique. In A Forward Converter After The Main Transformer Is Reset Its Secondary Voltage Diminishes To Zero. For Self-Driven Synchronous Rectifiers The Driving Voltage Is Lost And Current Is Forced To Go Through Body Diode With High Conduction Loss. Active Clamp Is A Method To Get Around The Problem But It Requires An Active Switch On The Primary Side. The Present Invention Introduces Gate Charge Retention Method By, Which No Additional Active Switch Is Required On The Primary Side. Synchronous Rectifiers Are Kept On Even After The Main Transformer Is Reset And Secondary Voltage Diminished To Zero. This Synchronous Rectifier Avoids Effect Of Leakage Inductance In Converter Transformer Windings And Operates At High Efficiency. This Synchronous Rectifier Can Operate In A Number Of Circuit Topologies.
Persistent Identifierhttp://hdl.handle.net/10722/46531
References

 

DC FieldValueLanguage
dc.date.accessioned2007-10-30T06:52:09Z-
dc.date.available2007-10-30T06:52:09Z-
dc.date.issued2002-
dc.identifier.citationUS Patent 6377477. Washington, DC: US Patent and Trademark Office (USPTO), 2002en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46531-
dc.description.abstractA Synchronous Rectifier Is Disclosed, Which Makes Use Of Gate Charge Retention Technique. In A Forward Converter After The Main Transformer Is Reset Its Secondary Voltage Diminishes To Zero. For Self-Driven Synchronous Rectifiers The Driving Voltage Is Lost And Current Is Forced To Go Through Body Diode With High Conduction Loss. Active Clamp Is A Method To Get Around The Problem But It Requires An Active Switch On The Primary Side. The Present Invention Introduces Gate Charge Retention Method By, Which No Additional Active Switch Is Required On The Primary Side. Synchronous Rectifiers Are Kept On Even After The Main Transformer Is Reset And Secondary Voltage Diminished To Zero. This Synchronous Rectifier Avoids Effect Of Leakage Inductance In Converter Transformer Windings And Operates At High Efficiency. This Synchronous Rectifier Can Operate In A Number Of Circuit Topologies.en_HK
dc.format.extent2156955 bytes-
dc.format.extent9923 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.relation.isreferencedbyUS 2010052768 (A1) 2010-03-04en_HK
dc.relation.isreferencedbyUS 8004344 (B2) 2011-08-23en_HK
dc.relation.isreferencedbyWO 2009079440 (A1) 2009-06-25en_HK
dc.relation.isreferencedbyUS 2007096700 (A1) 2007-05-03en_HK
dc.relation.isreferencedbyUS 7602156 (B2) 2009-10-13en_HK
dc.relation.isreferencedbyUS 2006133116 (A1) 2006-06-22en_HK
dc.relation.isreferencedbyUS 7362598 (B2) 2008-04-22en_HK
dc.relation.isreferencedbyUS 2004022076 (A1) 2004-02-05en_HK
dc.relation.isreferencedbyUS 6940732 (B2) 2005-09-06en_HK
dc.relation.isreferencedbyUS 2005047177 (A1) 2005-03-03en_HK
dc.relation.isreferencedbyUS 7035120 (B2) 2006-04-25en_HK
dc.relation.isreferencedbyUS 2003174522 (A1) 2003-09-18en_HK
dc.relation.isreferencedbyUS 6781853 (B2) 2004-08-24en_HK
dc.relation.isreferencedbyUS 6839246 (B1) 2005-01-04en_HK
dc.titleSelf-Driven Synchronous Rectifier By Retention Of Gate Chargeen_HK
dc.typePatenten_HK
dc.description.naturepublished_or_final_version-
dc.contributor.inventorXie, XFen_HK
dc.contributor.inventorXie, Xen_HK
dc.contributor.inventorPoon, NKen_HK
dc.contributor.inventorLiu, JCPen_HK
dc.contributor.inventorLiu, CPen_HK
dc.contributor.inventorPong, MHen_HK
patents.identifier.applicationUS 09/615382en_HK
patents.identifier.grantedUS 6377477en_HK
patents.description.assigneeUniv Hong Kong [Hk]en_HK
patents.description.countryUnited States of Americaen_HK
patents.date.granted2002-04-23en_HK
dc.relation.referencesUS 5625541 (A) 1997-04-29en_HK
dc.relation.referencesUS 5708571 (A) 1998-01-13en_HK
dc.relation.referencesUS RE36571 (E) 2000-02-15en_HK
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dc.relation.referencesUS 5659463 (A) 1997-08-19en_HK
dc.relation.referencesUS 5663635 (A) 1997-09-02en_HK
dc.relation.referencesUS 5668466 (A) 1997-09-16en_HK
dc.relation.referencesUS 5861734 (A) 1999-01-19en_HK
dc.relation.referencesUS 5880940 (A) 1999-03-09en_HK
dc.relation.referencesUS 6181578 (B1) 2001-01-30en_HK
patents.identifier.hkutechidEEE-1999-00017-1-
patents.date.application2001-02-21en_HK
patents.date.priority2001-02-21 US 09/615382en_HK
patents.date.priority1999-07-16 US 09/144127Pen_HK
patents.description.ccUSen_HK
patents.relation.familyUS 6377477 (B1) 2002-04-23en_HK
patents.description.kindB1en_HK
patents.typePatent_granteden_HK

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