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Article: Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer
Title | Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer |
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Authors | |
Keywords | Physics engineering |
Issue Date | 2007 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2007, v. 91 n. 15, article no. 152905 How to Cite? |
Abstract | Metal-oxide-semiconductor (MOS) capacitor with HfTiONHfSiON stack structure as high- k gate dielectric is fabricated, and its electrical properties are compared with those of a similar device with HfTiON only as gate dielectric. Experimental results show that the device with HfTiONHfSiON gate dielectric exhibits better interface properties, lower gate leakage current, and enhanced high-field reliability. All these improvements should be attributed to the fact that the HfSiON buffer layer effectively blocks the diffusion of Ti atoms to the Si substrate, thus resulting in a Si O2 Si -like HfSiONSi interface. © 2007 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/57453 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Xu, JP | en_HK |
dc.contributor.author | Ji, F | en_HK |
dc.contributor.author | Li, CX | en_HK |
dc.contributor.author | Lai, PT | en_HK |
dc.contributor.author | Guan, JG | en_HK |
dc.contributor.author | Liu, YR | en_HK |
dc.date.accessioned | 2010-04-12T01:37:10Z | - |
dc.date.available | 2010-04-12T01:37:10Z | - |
dc.date.issued | 2007 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2007, v. 91 n. 15, article no. 152905 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/57453 | - |
dc.description.abstract | Metal-oxide-semiconductor (MOS) capacitor with HfTiONHfSiON stack structure as high- k gate dielectric is fabricated, and its electrical properties are compared with those of a similar device with HfTiON only as gate dielectric. Experimental results show that the device with HfTiONHfSiON gate dielectric exhibits better interface properties, lower gate leakage current, and enhanced high-field reliability. All these improvements should be attributed to the fact that the HfSiON buffer layer effectively blocks the diffusion of Ti atoms to the Si substrate, thus resulting in a Si O2 Si -like HfSiONSi interface. © 2007 American Institute of Physics. | en_HK |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | en_HK |
dc.rights | Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 91 n. 15, article no. 152905 and may be found at https://doi.org/10.1063/1.2798248 | - |
dc.subject | Physics engineering | en_HK |
dc.title | Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=91&issue=15&spage=152905&epage=1 &date=2007&atitle=Improved+electrical+properties+of+metal-oxide-semiconductor+capacitor+with+HfTiON+gate+dielectric+by+using+HfSiON+interlayer | en_HK |
dc.identifier.email | Xu, JP: jpxu@eee.hku.hk | en_HK |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_HK |
dc.identifier.authority | Xu, JP=rp00197 | en_HK |
dc.identifier.authority | Lai, PT=rp00130 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.2798248 | en_HK |
dc.identifier.scopus | eid_2-s2.0-35248870050 | en_HK |
dc.identifier.hkuros | 150342 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-35248870050&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 91 | en_HK |
dc.identifier.issue | 15 | en_HK |
dc.identifier.spage | article no. 152905 | - |
dc.identifier.epage | article no. 152905 | - |
dc.identifier.isi | WOS:000250140700041 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Xu, JP=7407004696 | en_HK |
dc.identifier.scopusauthorid | Ji, F=8238553900 | en_HK |
dc.identifier.scopusauthorid | Li, CX=22034888200 | en_HK |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_HK |
dc.identifier.scopusauthorid | Guan, JG=7201449685 | en_HK |
dc.identifier.scopusauthorid | Liu, YR=36062331200 | en_HK |
dc.identifier.issnl | 0003-6951 | - |