Showing results 1 to 7 of 7
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
First Demonstration of Vertical Superjunction Diode in GaN Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2022 | |||
High linearity nanowire channel GaN HEMTs Proceeding/Conference:Device Research Conference - Conference Digest, DRC | 2013 | |||
(Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV Proceeding/Conference:ECS Transactions | 2021 | |||
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Journal:Applied Physics Letters | 2020 | |||
Monolithically Integrated Self-Biased Circulator for mmWave T/R MMIC Applications Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2021 | |||
Nanowire channel InAlN/GaN HEMTs with high linearity of g<inf>m</inf> and f<inf>T</inf> Journal:IEEE Electron Device Letters | 2013 | |||
Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN Journal:Applied Physics Letters | 2020 |