Browsing by Author Li, CX

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Showing results 28 to 47 of 60 < previous   next >
TitleAuthor(s)Issue DateViews
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Ji, FXu, JPLi, CXLai, PTChan, CL
2009
 
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric
Journal:Applied Physics A: Materials Science and Processing
Xu, HXXu, JPLi, CXChan, CLLai, PT
2010
 
Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer
Journal:Applied Physics Letters
Zhang, XFXu, JPLi, CXLai, PTChan, CLGuan, JG
2008
237
 
Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient
Journal:Applied Physics Letters
Xu, HXXu, JPLi, CXLai, PT
2010
180
 
Improved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayer
Journal:IEEE Electron Device Letters
Xu, JPZhang, XFLi, CXLai, PTChan, CL
2008
207
 
Improved electrical properties of germanium MOS capacitors with gate dielectric grown in wet-NO ambient
Journal:IEEE Electron Device Letters
Xu, JPLai, PTLi, CXZou, XChan, CL
2006
216
 
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment
Journal:Applied Physics A: Materials Science and Processing
Xu, JPZou, XLi, CXLai, PTChan, CL
2009
217
 
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer
Journal:Applied Physics Letters
Xu, JPJi, FLi, CXLai, PTGuan, JGLiu, YR
2007
116
 
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Journal:Applied Physics Letters
Ji, FXu, JPLiu, JGLi, CXLai, PT
2011
206
 
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer
Journal:IEEE Electron Device Letters
Ji, FXu, JPLai, PTLi, CXLiu, JG
2011
200
 
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
Journal:Applied Physics A: Materials Science and Processing
Lai, PTXu, JPLi, CXChan, CL
2005
 
Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Li, CXZou, XXu, JPLai, PT
2008
206
 
Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO
Journal:Microelectronic Engineering
Li, CXLai, PTXu, JP
2007
243
 
Influence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Ji, FXu, JPLai, PTLi, CX
2007
64
 
Integrative analyses of acute phase liver graft injury on late phase tumor recurrence after liver transplantation
Proceeding/Conference:Transplantation
Lee, NPYLuo, RWu, HLi, CXNg, KTPLam, TWLo, CMMan, K
2017
64
 
M2 macrophages promotes tumor growth and invasion in hepatocellular carcinoma.
Proceeding/Conference:Cancer Research
Yeung, WHLee, KWGeng, WLi, CXNg, TPLo, CMGuan, XPoon, RTPFan, STMan, K
2011
84
 
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zhang, XFXu, JPLai, PTZou, XLi, CX
2007
 
Novel mechanism for tissue repair of human induced pluripotent stem cells derived mesenchymal stem cells during liver regeneration
Proceeding/Conference:Liver Transplantation
Ma, YYLi, CXLaw, BLian, QZMan, KLo, CM
2012
169
 
Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitor
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Xu, HXXu, JPLi, CXLiu, LLai, PTChan, CL
2009
182
 
A physical model on scattering at high-κ dielectric/SiO2 interface of SiGe p-MOSFETs
Journal:IEEE Transactions on Electron Devices
Zhang, XFXu, JPLai, PTLi, CX
2007
Showing results 28 to 47 of 60 < previous   next >