Showing results 2 to 7 of 7
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Title | Author(s) | Issue Date | |
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First demonstration of 40-nm channel length top-gate WS<inf>2</inf> pFET using channel area-selective CVD growth directly on SiO<inf>x</inf>/Si substrate Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2019 | ||
High-Current Gain Two-Dimensional MoS<inf>2</inf>-Base Hot-Electron Transistors Journal:Nano Letters | 2015 | ||
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