Showing results 16 to 22 of 22
< previous
Title | Author(s) | Issue Date | |
---|---|---|---|
2003 | |||
Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors Journal:Semiconductor Science and Technology | 1995 | ||
Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA Journal:Electronics Letters | 1994 | ||
A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge Journal:Microelectronics Reliability | 2001 | ||
Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices | 1994 | ||
Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices | 1999 | ||
Thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors Journal:Applied Physics Letters | 2004 |