Showing results 11 to 20 of 20
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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
| 1992 | 26 | |||
In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy Journal:Advanced Materials for Optics and Electronics | 1997 | 36 | ||
Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries Journal:Surface Review and Letters | 2001 | 39 | ||
New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy Journal:Journal of Crystal Growth | 1997 | 42 | ||
| 1994 | 55 | |||
| 1993 | 17 | |||
| 1996 | 66 | |||
| 1996 | 45 | |||
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters | 1993 | 52 | ||
Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy Journal:Journal of Materials Science: Materials in Electronics | 1995 | 35 |