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	Title	Author(s)	Issue Date	Views
	New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy Journal:Journal of Crystal Growth	Zhang, J Lees, AK Taylor, AG Xie, MH Joyce, BA Sobiesierksi, Z Westwood, DI	1997
	Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy Journal:Applied Physics Letters	Xie, MH Zhang, J Mokler, SM Fernández, JM Joyce, BA	1994	61
	RHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures Journal:Surface Science	Ohtani, N Mokler, SM Xie, MH Zhang, J Joyce, BA	1993
	Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptness Journal:Journal of Crystal Growth	Fernández, JM Hart, L Zhang, XM Xie, MH Zhang, J Joyce, BA	1996	72
	Surface segregation during molecular beam epitaxy: The site-blocking effects of surfactant atoms Journal:Surface Science	Xie, MH Zhang, J Lees, A Fernandez, JM Joyce, BA	1996
	Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters	Ohtani, N Mokler, SM Xie, MH Zhang, J Joyce, BA	1993	60
	Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy Journal:Journal of Materials Science: Materials in Electronics	Fernández, JM Matsumura, A Zhang, XM Xie, MH Hart, L Zhang, J Joyce, BA Thornton, TJ	1995

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