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Browsing by Author Li, CX
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Showing results 50 to 60 of 60
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Title
Author(s)
Issue Date
A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric
Journal:
Microelectronic Engineering
Li, CX
Wang, CD
Leung, CH
Lai, PT
Xu, JP
2009
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings
Lai, PT
Li, CX
Xu, JP
Zou, X
Chan, CL
2005
Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
Journal:
Applied Physics Letters
Zou, X
Xu, JP
Li, CX
Lai, PT
2007
The inhibition of aldose reductase attenuates hepatic ischemia-reperfusion injury through reducing inflammatory response
Journal:
Annals of Surgery
Li, CX
Ng, KTP
Shao, Y
Liu, XB
Ling, CC
Ma, YY
Geng, W
Qi, X
Cheng, Q
Chung, SK
Lo, CM
Man, K
2014
The Roles of Lipocalin-2 in Small-for-Size Fatty Liver Graft Injury
Journal:
Annals of Surgery
Cheng, Q
Ng, KTP
Xu, A
Li, CX
Liu, XB
Guo, DY
Poon, RTP
Fan, ST
Lo, CM
Man, K
2014
Thermal Analysis of Liquid Crystal Phase Transition Using FTIR Spectroscopy
Journal:
Kao Teng Hsueh Hsiao Hua Heush Hsueh Pao/ Chemical Journal of Chinese Universities
Wu, Q
Li, CX
Li, XC
Li, YH
2001
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceeding/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Zou, X
Li, CX
Xu, JP
Lai, PT
Chen, WB
2006
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer
Journal:
Microelectronics Reliability
Zou, X
Xu, JP
Li, CX
Lai, PT
Chen, WB
2007
Two-dimensional infrared correlation spectroscopy on dodecyloxy benzoic acid phase transition
Journal:
Spectroscopy And Spectral Analysis
Wu, Q
Li, CX
Li, XC
Li, YH
2001
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Journal:
Thin Solid Films
Xu, JP
Zou, X
Lai, PT
Li, CX
Chan, CL
2009
Wide-bandgap high- k Y2 O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high- k HfTiO gate dielectric
Journal:
Applied Physics Letters
Li, CX
Lai, PT
2009