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Browsing by Author Yang, YF
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Showing results 9 to 26 of 26
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Title
Author(s)
Issue Date
High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management
Journal:
IEEE Transactions on Electron Devices
Yan, BP
Yang, ES
Yang, YF
Wang, XQ
Hsu, CC
2003
High frequency and low noise C-doped GalnP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP
Journal:
Electronics Letters
Yang, YF
Hsu, CC
Yang, ES
1996
High frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage
Journal:
Electronics Letters
Ou, HJ
Hsu, CC
Yang, YF
Yang, ES
1997
A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector
Journal:
IEEE Electron Device Letters
Yang, YF
Hsu, CC
Yang, ES
Ou, HJ
1996
Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing
Journal:
Applied Physics Letters
Tchikatilov, D
Yang, YF
Yang, ES
1996
InGaP/GaAs power heterostructure-emitter bipolar transistor
Journal:
Electronics Letters
Yan, BP
Yang, ES
Yang, YF
Wang, XQ
Hsu, CC
2001
Integration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors
Journal:
IEEE Electron Device Letters
Yang, YF
Hsu, CC
Yang, ES
1996
Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, ES
Hsu, CC
Lo, HB
Yang, YF
2000
Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors
Journal:
Semiconductor Science and Technology
Yang, YF
Hsu, CC
Yang, ES
1995
Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA
Journal:
Electronics Letters
Yang, YF
Hsu, CC
Yang, ES
1994
Reactive ion etching of gallium nitride using hydrogen bromide plasmas
Journal:
Electronics Letters
Ping, AT
Adesida, I
Asif Khan, M
Kuznia, JN
Yang, YF
Yang, ES
1994
Recent advances in rock tunnelling in China (Keynote address)
Proceeding/Conference:
Proceedings of the Seminar on Geotechnical Problems of Rapidly Developing Areas in China, Hong Kong Institution of Engineers, May 24, 1996
Lee, CF
Wang, SJ
Yang, YF
1996
A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge
Journal:
Microelectronics Reliability
Van, BP
Yang, YF
Hsu, CC
Lo, HB
Yang, ES
2001
SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing
Journal:
IEEE Electron Device Letters
Li, PW
Yang, ES
Yang, YF
Chu, JO
Meyerson, BS
1994
State holding circuit using heterojunction bipolar transistors and resonant tunnelling diodes
Journal:
Electronics Letters
Yang, YF
Wang, WI
Yang, ES
1994
Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, YF
Hsu, CC
Yang, ES
1994
Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, ES
Yang, YF
Hsu, CC
Ou, HJ
Lo, HB
1999
Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor
Journal:
Applied Physics Letters
Lo, HB
Yang, ES
Yang, YF
1999