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Title	Author(s)	Issue Date
Activities towards p-type doping of ZnO Proceeding/Conference:Journal of Physics: Conference Series	Brauer, G Kuriplach, J Ling, CC Djurisic, AB	2011
Aluminum and electron-irradiation induced deep-levels in n-type and p-type 6H-SiC Proceeding/Conference:Defect and impurity engineered semiconductors II, Materials Research Society Symposium Proceedings	Gong, M Beling, CD Fung, SHY Brauer, G Wirth, H Skorupa, W You, ZP	1998
Aluminum-implantation-induced deep levels in n-type 6H–SiC Journal:Journal of Applied Physics	Fung, SHY Gong, M Beling, CD Brauer, G Wirth, H Skorupa, W	1998
Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbide Journal:Applied Physics Letters	Chen, XD Ling, CC Gong, M Fung, S Beling, CD Brauer, G Anwand, W Skorupa, W	2005
Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering Journal:Journal of Applied Physics	Fan, JC Zhu, CY Fung, S Zhong, YC Wong, KS Xie, Z Brauer, G Anwand, W Skorupa, W To, CK Yang, B Beling, CD Ling, CC	2009
Au/n-ZnO rectifying contacts fabricated with hydrogen peroxide pre-treatment Proceeding/Conference:Materials Research Society Symposium Proceedings	Gu, Q Ling, CC Cheung, CK Luo, J Chen, X Djurisic, A Brauer, G Anwand, W Skorupa, W Reuther, H Ong, HC	2007
Characterization of microstructural defects in melt grown ZnO single crystals Journal:Journal of Applied Physics	Anwand, W Brauer, G Grynszpan, RI Cowan, TE Schulz, D Klimm, D Iek, J Kuriplach, J Prochzka, I Ling, CC Djurii, AB Klemm, V Schreiber, G Rafaja, D	2011
Characterization of ZnO nanostructures: A challenge to positron annihilation spectroscopy and other methods Journal:Physica Status Solidi (C) Current Topics in Solid State Physics	Brauer, G Anwand, W Grambole, D Egger, W Sperr, P Beinik, I Wang, L Teichert, C Kuriplach, J Lang, J Zviagin, S Cizmar, E Ling, CC Hsu, YF Xi, YY Chen, X Djurišić, AB Skorupa, W	2009
Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film Journal:Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films	Fan, J Zhu, C Yang, B Fung, S Beling, CD Brauer, G Anwand, W Grambole, D Skorupa, W Wong, KS Zhong, YC Xie, Z Ling, CC	2011
Current transport at low temperature in A1/6H-SiC Schottky barriers Proceeding/Conference:Institute of Physics Conference Series No.142: Chapter 4 Paper presented at Silicon Carbide and Related Materials 1995 Conference, Kyoto, Japan	Chavva, VR Fung, S Beling, CD Brauer, G	1996
Deep level defect study of As-implanted ZnO p-n junction Proceeding/Conference:Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications, E-MRS 2008 Spring Meeting, Strasbourg, France, May 26-30, 2008	Zhu, C Ling, FCC Brauer, G Anwand, W Skorupa, W	2008
Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation Proceeding/Conference:AIP Conference Proceedings	Ling, CC Chen, XD Fung, S Beling, CD Brauer, G Anwand, W Skorupa, W Gong, M	2005
Deep level defects in 6H silicon carbide Journal:物理	Ling, CC Chen, XD Fung, SHY Beling, CD Gong, M Ge, WK Wang, JN Brauer, G Anwand, W Skorupa, W	2004
Deep level defects in 6H silicon carbide induced by particles irradiations Proceeding/Conference:The National Conference of Semiconductor Physics	Ling, FCC Chen, X Gong, M Ge, WK Wang, JN Yang, CL Brauer, G Anwand, W Skorupa, W Beling, CD Fung, SHY Wang, HY Weng, HM	2005
Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction Journal:Applied Physics Letters	Gu, QL Ling, CC Brauer, G Anwand, W Skorupa, W Hsu, YF Djurišić, AB Zhu, CY Fung, S Lu, LW	2008
Deep level defects in he-implanted n-6H-SiC studied by deep level transient spectroscopy Proceeding/Conference:Materials Research Society Symposium Proceedings	Chen, XD Ling, CC Fung, S Beling, CD Wu, HS Brauer, G Anwand, W Skorupa, W	2004
Deep level transient spectroscopic study of nitrogen-implanted ZnO single crystal Proceeding/Conference:International Symposium on Compound Semiconductors, ISCS 2010	Ding, G Ling, CC Anwand, W Brauer, G Skorupa, W	2010
Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystal Journal:Semiconductor Science and Technology	Ye, ZR Lu, XH Ding, GW Fung, S Ling, CC Brauer, G Anwand, W	2011
Deep level traps in the extended tail region of boron-implanted n-type 6H-SiC Journal:Applied Physics Letters	Gong, M Reddy, CV Beling, CD Fung, S Brauer, G Wirth, H Skorupa, W	1998
Deep-level defects in n-type 6H silicon carbide induced by He implantation Journal:Journal of Applied Physics	Ling, CC Chen, XD Brauer, G Anwand, W Skorupa, W Wang, HY Weng, HM	2005

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