Showing results 1 to 4 of 4
Title | Author(s) | Issue Date | |
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High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2020 | ||
High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS nFET and Nonvolatile Charge-Trap Memory Journal:IEEE Electron Device Letters | 2020 | ||
2020 | |||
2020 |