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Showing results 1 to 4 of 4

	Title	Author(s)	Issue Date
	A high-yield HfO<inf>x</inf>-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration Journal:IEEE Electron Device Letters	Tran, X. A.Yu, H. Y.Yeo, Y. C.Wu, L.Liu, W. J.Wang, Z. R.Fang, Z.Pey, K. L.Sun, X. W.Du, A. Y.Nguyen, B. Y.Li, M. F.	2011
	High performance unipolar AlO<inf>y</inf>/HfO<inf>x</inf>/Ni based RRAM compatible with Si diodes for 3D application Proceeding/Conference:2011 Symposium on VLSI Technology - Digest of Technical Papers	Tran, X. A.Gao, B.Kang, J. F.Wu, L.Wang, Z. R.Fang, Z.Pey, K. L.Yeo, Y. C.Du, A. Y.Nguyen, B. Y.Li, M. F.Yu, H. Y.	2011
	Highly uniform, self-compliance, and forming-free ALD HfO<inf>2</inf>-based RRAM with Ge doping Journal:IEEE Transactions on Electron Devices	Wang, Zhongrui Zhu, W. G.Du, A. Y.Wu, L.Fang, Z.Tran, X. A.Liu, W. J.Zhang, K. L.Yu, H. Y.	2012
	Self-rectifying and forming-free unipolar HfO<inf>x</inf> based-high performance RRAM built by fab-avaialbe materials Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Tran, X. A.Gao, B.Kang, J. F.Wu, X.Wu, L.Fang, Z.Wang, Z. R.Pey, K. L.Yeo, Y. C.Du, A. Y.Liu, M.Nguyen, B. Y.Li, M. F.Yu, H. Y.	2011

Showing results 1 to 4 of 4