Showing results 1 to 7 of 7
Title | Author(s) | Issue Date | |
---|---|---|---|
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects Journal:Microelectronics Reliability | 2008 | ||
2007 | |||
Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations Journal:Applied Physics Letters | 2007 | ||
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric Journal:Microelectronics Reliability | 2008 | ||
2008 | |||
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer Journal:Applied Physics Letters | 2007 | ||
Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric Journal:Microelectronics Reliability | 2008 |